16 results
AlGaN Transition Layers on Si (111) Substrates - Observations of Microstructure and Impact on Material Quality
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C06-03
- Print publication:
- 2008
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Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y7.2
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- 2003
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Principles for the conservation of wild living resources
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- Journal:
- Environment and Development Economics / Volume 2 / Issue 1 / February 1997
- Published online by Cambridge University Press:
- 30 March 2001, pp. 39-110
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Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 502-507
- Print publication:
- 1999
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Absorption Coefficient and Refractive Index of GaN, AIN and AlGaN Alloys
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G5.2
- Print publication:
- 1998
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MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 271
- Print publication:
- 1996
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Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 215
- Print publication:
- 1996
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Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 757
- Print publication:
- 1995
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Integrated Heterostructure Devices (IHDS): A New Approach for the Fabrication of High-Efficiency Blue/Green Light Emitters Based on II-VI Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 549
- Print publication:
- 1992
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Blue Lasers Based on II-VI Semiconductor Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 543
- Print publication:
- 1992
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Narrow-Gap Nonlinear Optical Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 397
- Print publication:
- 1989
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HgTe-CdTe Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 161 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 413
- Print publication:
- 1989
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Study of HgTe-cdTe Multilayer Structures by Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 90 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 217
- Print publication:
- 1986
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Far Infrared Magnetoabsorption in Hg1-xMnxTe/HgTe Superlattice
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- Journal:
- MRS Online Proceedings Library Archive / Volume 89 / 1986
- Published online by Cambridge University Press:
- 26 February 2011, 261
- Print publication:
- 1986
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MBE Growth of Mercury Cadmium Telluride: Issues and Practical Solutions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 90 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 419
- Print publication:
- 1986
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Dilute Magnetic Semiconductor Superlattices Containing Hg1-xMnxTe
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- Journal:
- MRS Online Proceedings Library Archive / Volume 89 / 1986
- Published online by Cambridge University Press:
- 26 February 2011, 255
- Print publication:
- 1986
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