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Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues

Published online by Cambridge University Press:  01 February 2011

Pradeep Rajagopal ,
John C. Roberts ,
J. W. Cook Jr ,
J. D. Brown ,
Edwin L. Piner  and
Kevin J. Linthicum
Pradeep Rajagopal
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
John C. Roberts
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
J. W. Cook Jr
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
J. D. Brown
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
Edwin L. Piner
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
Kevin J. Linthicum
Affiliation:
Nitronex Corporation, 628 Hutton Street, Suite 106, Raleigh, NC 27606
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Abstract

AlGaN/GaN based high power, high frequency high electron mobility transistors (HEMTs) have been in development for over a decade. Although much progress has been made, AlGaN/GaN HEMT technology has yet to be commercialized. The choice of silicon as the substrate for the growth of GaN-based epi layers will enable commercialization of AlGaN/GaN based HEMTs, because of its maturity, scalability, reproducibility and economy. One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the understanding of parasitic losses that can adversely impact the RF device performance. The effect of the III-N MOCVD process on the resistivity of the Si substrate, and correlations between the Si substrate resistivity and AlGaN/GaN HEMT RF characteristics are presented. Optimization of the MOCVD growth process led to a reduction in parasitic doping of the Si substrate. This resulted in the following improvements: (a) small signal gain increased from 17 to 21dB, (b) the cut-off frequency increased from 7 to 11GHz and (c) the maximum frequency of oscillation improved from 12 to 20GHz. This optimized process will enhance performance of AlGaN/GaN HEMTs at higher frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y7.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1 Androulidaki, M., Georgakilas, A., Peiro, F., Amimer, K., Zervos, M., Tsagaraki, K., Dimakos, M., and Cornet, A., Phys. Stat. Sol. (a) 188, No.2, 515 (2001).Google Scholar
2 Wang, D., Yoshida, S., Ichikawa, M., J. Cryst. Growth, 242, 20 (2002).Google Scholar
3 Jang, Seong_Hwan, Lee, Seung-Jae, Seo, In-Seok, Ahn, Haeng-Keun, Lee, Oh-Yeon, Leem, Jae-Young, Lee, Cheul-Ro, Cryst, J. Growth, 241, 289 (2002)Google Scholar
4 Marso, M., Javorka, P., Dikme, Y., Kalisch, H., Bernát, J., Shäfer, C., Schineller, B., Hart, A.v.d., Volter, M., Fox, A., Jansen, R. H., Heuken, M., Kordoš, P., and Lüth, H., Phys. Stat. Sol. (a), 200, No. 1, 179 (2003)Google Scholar
5 Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M. and Kordoš, P., Electronics Letters, 38, No. 6, 288 (2002)Google Scholar
6 Marso, M., Wolter, M., Javorka, P., Kordoš, P., and Lüth, H., App. Phys. Lett., 82, No. 4, 633, 2003.Google Scholar
7 Rajagopal, Pradeep, Gehrke, Thomas, Roberts, John C., Brown, J. D., Warren Weeks, T., Piner, Edwin L., and Linthicum, Kevin J., Mat. Res. Soc. Symp. Proc., 743, 3 (2003).Google Scholar
8 Singhal, S., Brown, J.D., Borges, R., Piner, E., Nagy, W., Vescan, A., GAAS 2002 Conference Proceedings, Milan, Italy. Sept. 23–27 (2002).Google Scholar
9 Vescan, A., Brown, J.D., Johnson, J.W., Therrien, R., Gehrke, T., Rajagopal, P., Roberts, J.C., Singhal, S., Nagy, W., Borges, R., Piner, E., & Linthicum, K, Physica Status Solidi (c), 0, No. 1, 52, (2002).Google Scholar
10 Brown, J. D., Borges, Ric, Piner, Edwin, Vescan, Andrei, Singhal, Sameer, Therrien, Robert, Solid State Electronics, 46 1535 (2002).Google Scholar