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Integrated Heterostructure Devices (IHDS): A New Approach for the Fabrication of High-Efficiency Blue/Green Light Emitters Based on II-VI Materials

Published online by Cambridge University Press:  25 February 2011

Y. Lansari ,
Z. Yu ,
J. Ren ,
C. Boney ,
J. W. Cook Jr  and
J. F. Schetzina
Y. Lansari
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
Z. Yu
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
J. Ren
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
C. Boney
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
J. W. Cook Jr
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
J. F. Schetzina
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695–8202
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Abstract

Integrated heterostructure devices (IHDs) comprised of II-VI materials in multi-layered structures for light emitting diode (LED) and laser diode (LD) applications are described. These IHDs combine a light emission multilayer structure (wide band gap II-VI layers) with an abrupt or graded heterostructure (comprised of narrow band gap II-VI layers) for improved ohmic contact to the upper p-type layer of the light emitting structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 549
Copyright
Copyright © Materials Research Society 1993

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References

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