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Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates

Published online by Cambridge University Press:  10 February 2011

M. A. L. Johnson ,
Zhonghai Yu ,
C. Boney ,
W. C. Hughes ,
J. W. Cook Jr. ,
J. F. Schetzina ,
H. Zhao ,
B. J. Skromme  and
J. A. Edmond
M. A. L. Johnson
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
Zhonghai Yu
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
C. Boney
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
W. C. Hughes
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
J. W. Cook Jr.
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
J. F. Schetzina
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
H. Zhao
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287–5706
B. J. Skromme
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287–5706
J. A. Edmond
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
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Abstract

Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and I stpositive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 215
Copyright
Copyright © Materials Research Society 1997

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References

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