20 results
Small Diameter Dry Etched Via Holes in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 153
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- 1993
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Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 337
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- 1993
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Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 797
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- 1992
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Iodine-Based dry Etching Chemistries for InP and Related Compounds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 282 / 1992
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- 22 February 2011, 123
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- 1992
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Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures
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- MRS Online Proceedings Library Archive / Volume 262 / 1992
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- 03 September 2012, 763
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- 1992
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Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 282 / 1992
- Published online by Cambridge University Press:
- 22 February 2011, 239
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- 1992
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HI/H2 ECR Plasma Etching of III-V Semiconductors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 268 / 1992
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- 25 February 2011, 17
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- 1992
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Self-Aligned, Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 260 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 19
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- 1992
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Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 63
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- 1991
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Anisotropic Reactive Ion Etching of Submicron W Features In CF4 or SF6 Plasmas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 315
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- 1991
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Electron Cyclotron Resonance Plasma Processing of GaAs-AlGaAs Hemt Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 293
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- 1991
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Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 417
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- 1991
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An Etch-Back Planarization Process Using A Sacrificial Polymide Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 349
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- 1991
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Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 409
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- 1991
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Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 523
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- 1991
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Dry Etch Damage in GaAs P-N Junctions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 301
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- 1991
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Dry Etch Self-Aligned AlInAs/InGaAs Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 285
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- 1991
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Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 216 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 451
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- 1990
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In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 181 / 1990
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- 25 February 2011, 481
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- 1990
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Temperature Dependence of Etch Rate and Residual Damage in Reactively Ion Etched GaAs and AlGaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 129 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 489
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- 1988
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