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Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning

  • F. Ren (a1), S. J. Pearton (a1), T. R. Fullowan (a1), W. S. Hobson (a1), S. N. G. Chu (a1) and A. B. Emerson (a1)...

Abstract

An in-situ argon ion-mill clean step prior to ohmic metal deposition combined with a Mo barrier layer AuGe based ohmic metallization which is compatible with dry-etch process have been demonstrated to improve the uniformity of the contact parameters and reduce the contact resistance. After ion mill cleaning, the native oxide regrowth of MBE grown GaAs and AlGaAs layers in vacuum chamber was also studied to optimize the processing. These oxide layers were identified as the cause of problems in the formation of good ohmic contacts to the GaAs or AlGaAs, the Mo diffraction barrier also reduced the contact resistivity with excellent adesion, smooth morphology, and sharp edge definition.

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