We carried out snow-pit observations at Nagaoka, Niigata prefecture, Japan, where the snow layers were at the melting point. It was observed that the water content in the snowpack was nearly constant at approximately 10%, and the coarsening rate of snow particles was about 0.4×10–3mm3 h–1, which was in the range between the rate for dry snow and that for snow soaked in water. The isotope change of snow particles by melting and freezing in a closed system under isothermal conditions at 0˚C was modeled. The temporal change in isotope concentration was calculated for wet snow layers, based on the fractionation between snow particles and liquid water in between the particles, in association with the coarsening of snow particles. The results compared well with field observations. These results suggest that the isotope concentration of the pore water that flows downward from the surface contributed significantly to the isotope change of snow particles.

SiO maser emission from the Bulge IRAS sources has been searched by the v=1, J=1−0 and v=2, J=1—0 transitions to investigate the kinematics of the Galactic Bulge, resulting in a sample of 124 line-of-sight velocities. The rotation velocity, velocity dispersion, and velocity offset at l = 0° for the sample are found to be , and —18.2±9.7 km s−1, respectively (80% confidence interval). Furthermore we find trends for the rotation velocity and velocity dispersion to decrease with distance from the galactic plane. These trends are supported by a larger sample constructed by incorporating other available velocity data on the Bulge IRAS sources. The rotation velocity and velocity dispersion are expressed as 15.6—1.23x|b(deg)| km s−1 deg−1 and 101−3.6x |b(deg)| km s−1, respectively. The implications of the observed quantities are discussed.

Evidence for the bar structure in our Galaxy has been shown by Blitz and Spergel (1991b) based on the near-infrared maps of the bulge, by Nakada et al. (1991) based on IRAS point source catalogue, and more clearly by recent COBE maps. However, no clear “dynamical” signature of the bulge bar has been found yet. At optical wavelengths, stellar radial velocities of the bulge stars were observed only at the optical windows and were not observed for the entire region of the bulge because of the dust extinction in this direction.

Infrared spectra of evolved stars are generally dominated by the radiation from their circumstellar shells. M stars are characterized by the 10 μm emission feature from silicate dust grains, while C stars by the 11 μm SiC band. However, some C stars have been found to show the 10 μm feature indicating the oxygen-rich property of their circumstellar dust (Willems and de Jong 1986, Little-Marenin 1986).

In order to investigate the gas phase chemistry of the circumstellar envelopes around these peculiar objects, we have observed radio molecular lines of H2O, SiO, HCN, and CO towards three of them BM Gem (C5, 4J), V778 Cyg (C4, 5J), and EU And (C4, 4).

One of the critical issues for development of the nuclear fusion demonstration reactor (DEMO) is the high heat flux on heat-resistant equipments, especially the blanket and divertor. Materials of such equipments require relatively high thermal conductivities. In this study, we developed iron-based composite materials with carbon nanotube (CNT) and copper, which have high thermal diffusivities, by means of Hot Pressing (HP) and Spark Plasma Sintering (SPS).

The thermal diffusivity in the iron/CNT composites was not high enough compared with that of pure iron, while iron/copper composite showed a relatively high thermal diffusivity in the joining conditions. One of the reasons not to be improved thermal diffusivity could be non-mono-dispersion of CNT by the formation of carbides in the matrix.

We carried out an extensive photometric and spectroscopic investigation of the SPB binary, HD 25558 (see Fig. 1 for the time and geographic distribution of the observations). The ~2000 spectra obtained at 13 observatories during 5 observing seasons, the ground-based multi-colour light curves and the photometric data from the MOST satellite revealed that this object is a double-lined spectroscopic binary with a very long orbital period of about 9 years. We determined the physical parameters of the components, and have found that both lie within the SPB instability strip. Accordingly, both components show line-profile variations consistent with stellar pulsations. Altogether, 11 independent frequencies and one harmonic frequency were identified in the data. The observational data do not allow the inference of a reliable orbital solution, thus, disentangling cannot be performed on the spectra. Since the lines of the two components are never completely separated, the analysis is very complicated. Nevertheless, pixel-by-pixel variability analysis of the cross-correlated line profiles was successful, and we were able to attribute all the frequencies to the primary or secondary component. Spectroscopic and photometric mode-identification was also performed for several of these frequencies of both binary components. The spectroscopic mode-identification results suggest that the inclination and rotation of the two components are rather different. While the primary is a slow rotator with ~6 d rotation period, seen at ~60° inclination, the secondary rotates fast with ~1.2 d rotation period, and is seen at ~20° inclination. Our spectropolarimetric measurements revealed that the secondary component has a magnetic field with at least a few hundred Gauss strength, while no magnetic field was detected in the primary.

The detailed analysis and results of this study will be published elsewhere.

The LaFeO3 and CaFeOX layers are grown using highly dense target prepared by Pechini method, with which accurate growth rate is achieved. Since the LaFeO3demonstrates the obvious RHEED oscillation until the end of growth, constant growth rate, and the step-terraces structure, the LFO is employed as a buffer and/or reference layer to determine the required pulses to deposit the thickness we desire in the superlattice. Superlattices show the clear satellite peaks and Laue oscillation in the XRD spectra as well as the oscillations caused by the film thickness with a flat surface and superstructure with a flat interface in the x-ray reflection spectrum. The streaky RHEED patterns and step-terraces surface are consistent with the results of spectra using x-ray.

Thin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Chlorine-enhanced GaAs maskless etching using a novel focused-ion-beametching (FIBE) system has been examined for establishing high-rate and smooth FIBE. The system is composed of an air-locked ultrahigh-vacuum chamber, a 30 KeV Ga+ FIB column and two kinds of chlorine-irradiation nozzles. A fine nozzle enabled us to irradiate a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding-gas pressure for stable Ga+ FIB emission. Highly chemically-enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained. At the maximum yield, line-scanned deep-groove (6.5 um) etching with a smooth surface, capable of fabricating a laser-cavity optical mirror, was demonstrated. The chemical-enhancement effect showed high FIB-scanning-time dependence. This effect was also observed by irradiating with a plasma-dissociated Cl radicals using a novel radical beam gun. An analytical model, based on the Ga+-ion bombardment on the chlorine-adsorbed substrate surface, suggested that the maximum chemical enhancement is obtained when the Ga+-FIB scanning time is adjusted to the chlorine-coverage time, given by the Cl2-molecule or Cl-radical flux density.

In this paper, ion channeling techniques are used to show that epitaxial GaAs layers grown on vicinal Si(001) wafers do not have their [001] axis precisely aligned with that of the Si substrate. Instead, the [001] axis of the GaAs layer is found to be tilted toward the surface normal of the Si substrate. This tilt was found to be ∼0.2° on vicinal Si(001) substrates which have their [001] axis tilted 4° toward the [110] azimuth. It is speculated that this misalignment is reponsible for the residual density of threading dislocations in the GaAs on Si layer. An approach described here, which can be used to avoid strain in the GaAs layer, is to grow a CaF2 buffer layer between the Si substrate and the epitaxial GaAs layer. High quality epitaxial GaAs layers have been obtained on both CaF 2 /Si(001) and CaF 2 /Si(111) substrates. Strain measurements of the epitaxial GaAs on the CaF 2 buffer layers indicate that these layers have strains below our detection limits.

From the irradiation resistance and high-temperature strength, oxide dispersion strengthened (ODS) ferritic steels are candidate materials for advanced and fusion reactors. For the development of advanced steels the key issue is to homogenize nano-particles into matrix. Recent studies have indicated that Ti addition can homogenize Y-Ti complex particles into ferrite matrix, but the reason of the effect of additional elements has not been clarified. In this model study, we focus on the effect of additional elements, such as IV and V families and other oxide formers, which can control potentially the distribution of the oxide particles. The materials used in this study were based on Fe-9Cr-Y2O3 alloys which were mechanical alloyed (MA) from the powder of Fe, Cr and Y2O3, which was added systematically with the element of Ti, Zr, Ta, V, Nb, Hf, Al, Si and others. Usually ODS fabrication process is required for hot extrusion, but we annealed up to 1150 C for simplify the microstructure. To evaluate the distribution of ODS particles; we used TEM equipped with EDS after electro-polishing or FIB techniques. (1) In the case of Si or Al addition, oxides were disappeared after MA process, which means Y2O3 and other elements should be in solution at non-equilibrium condition. Two types of oxides of Y2O3 and Al2O3 or SiO2 developed after the annealing at 850 C, but only complex oxides were developed after the annealing at 1150 C. This result suggests that the oxide formation is independent process for Y and Si or Al. (2) In the case of Ti addition, oxides also were disappeared after MA process, but developed after annealing at 1150 C. This means that Ti can stabilize complex oxides of Y and Ti, and enhance the fine distribution of the oxides comparing with simple Fe-9Cr-Y2O3 alloy.

Single crystal NiSi2 films of type A and type B orientations with thicknesses ranging from 70–600Å have been grown on (111), n-type Si substrates. TEM and channeling measurements indicate that these films are of excellent epitaxial quality with uniform orientations over the entire range of observation. HRTEM studies show regular and atomically abrupt interfaces for both NiSi2 orientations with occasional localized planar defects. I-V and photoresponse measurements of the Schottky barrier heights(SBH) of the type A films yield consistent values of 0.62±.01eV. However, for type B films I-V measurements give a SBH of 0.69±.01eV while the photoresponse results give 0.77±.05eV. This discrepancy can be explained quantitatively by a phenomenological model in which a small percentage of low barrier height regions is incorporated into the type B films.

In this paper, a general formula is calculated relating the misalignment of a heteroepitaxial overlayer with respect to the substrate to the defects at the interface. High-resolution TEM studies are presented which show that the density of dislocations along the interface of GaAs grown on vicinal Si(100), with Burgers vector perpendicular to the interface, is consistent with the amount of tilt observed in ion-channeling studies. Arguments are also presented which demonstrate that the tilt observed is an effective form of strain relief but that this mechanism can only operate when the heteroepitaxial growth is nucleated by island growth. One significant conclusion is that the lower bound observed on the threading dislocation density in GaAs on Si is due to this mechanism of strain relief by tilting.

Supersaturated high-conductivity polycrystalline silicon (polysilicon) formed by rapid thermal processing (RTP) is a promising new material for emitters, contacts and diffusion sources in advanced high-speed bipolar and MOS IC technologies.

A matrix of processing conditions was used to evaluate the effect of polysilicon thickness, implant dose, RTP conditions and the nature of the substrate on the dopant diffusion in both the polysilicon and single crystal substrate and also on the interface properties.

Results of conductivity measurements, spreading resistance profiling (SRP), secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS)/channeling are presented. The results have proved the formation of shallow, defect-free junctions and epitaxial emitters with low series resistance and improved contact properties.

This paper presents the current advances in the development of materials in the field of telecommunication wiring together with the background which created the need for the new technologies. The background is somewhat unique to the current socio-economical situation of Japan. The key technical areas, which are addressed in this paper, are; (1) fibers for transmission of over 1 Tbps by utilizing WDM (wavelength division multiplexing), (2) fibers for fiber amplifiers to replace repeaters within trunk lines, (3) high density cables with over 1000 fiber counts, (4) ABF (air blown fiber) for access system, (5) plastic optical fibers wiring in premises or offices operating at the transmission speed of over 200 Mbps.