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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 588-593
- Print publication:
- 1999
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.9
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- 1998
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Chemical Kinetics Models for Semiconductor Processing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 490 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 143
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- 1997
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A simplified analytical model of diamond growth in direct current arcjet reactors
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- Journal:
- Journal of Materials Research / Volume 10 / Issue 8 / August 1995
- Published online by Cambridge University Press:
- 03 March 2011, pp. 1993-2010
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- August 1995
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Gas-Phase Silicon Atom Densities in the Chemical Vapor Deposition of Silicon from Silane
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 3
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- 1993
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A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 145 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 119
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- 1989
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Laser Probes and Numerical Modeling as Process Diagnostics in Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 117 / 1988
- Published online by Cambridge University Press:
- 22 February 2011, 23
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- 1988
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Laser-Excited Fluorescence Detection of Si2 During Silane CVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 29 / 1983
- Published online by Cambridge University Press:
- 21 February 2011, 225
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- 1983
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