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Chemical Kinetics Models for Semiconductor Processing

Published online by Cambridge University Press:  10 February 2011

Michael E. Coltrin ,
Ellen Meeks ,
Joseph F. Grcar ,
William G. Houf ,
Robert J. Kee  and
J. Randall Creighton
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
Ellen Meeks
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Joseph F. Grcar
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
William G. Houf
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Robert J. Kee
Affiliation:
Colorado School of Mines, Golden, CO 80401
J. Randall Creighton
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
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Abstract

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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References

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