The Permian/Triassic mass extinction, the most devastating biotic crisis of the Phanerozoic, has aroused considerable scientific interest. However, because research has focused primarily on understanding the magnitude of diversity reduction and causal mechanisms, the nature and timing of biotic recovery in the Early Triassic are still poorly understood. Marine limestones in the Lower Triassic Moenkopi Formation, which disconformably overlies the Upper Permian of southeastern Nevada and southern Utah, provide a rare opportunity to study the aftermath of the mass extinction in shallow water carbonate environments.

Two contemporaneous members of the Moenkopi record the first marine incursion from the northwest in the Early Triassic (Smithian), the very sparsely fossiliferous marginal marine Schnabkaib Member in Nevada and southwest Utah, and the Sinbad Limestone in central-southern Utah, a marine unit dominated by amalgamated and condensed fossil-rich beds. The Virgin Limestone member was deposited during a subsequent (Spathian) Early Triassic sea level rise, about 4-5 Ma following the Permian/Triassic boundary, and includes nearshore and inner shelf limestones characterized by fossiliferous storm beds.

Because the fossiliferous limestones of the Smithian Sinbad and the Spathian Virgin were deposited in similar shallow subtidal settings, they provide an opportunity to compare and contrast the status of biotic rebound at different points along an Early Triassic “time transect.” Analysis of bulk samples reveals that the older Sinbad and younger Virgin are similar in each possessing 2-3 different benthic marine paleocommunities of low within-habitat species richness. There are, however, several important differences between the Sinbad and Virgin faunas. The richly fossiliferous Sinbad assemblages are primarily molluscan, composed of approximately 2-8 species of bivalves, which may or may not be accompanied by ammonoids and 0-11 species of gastropods. Small spines, possibly belonging to an echinoid, are numerous in some samples. Although bivalves are also abundant in Virgin Limestone assemblages, fossils of other higher taxa are well-represented, including abundant crinoid ossicles, common brachiopods, echinoid spines and plates, and rare ammonoids and gastropods. Sinbad faunas also appear to lack epibionts and borers, while they are present but not abundant in the Virgin.

The addition from Sinbad to Virgin times of groups other than molluscs, with different life habits and strategies, most likely led to an increase in spatial partitioning and resource utilization, in particular the development of epifaunal tiering with the appearance of stalked crinoids in the Virgin. This pattern of earliest Triassic community dominance by molluscs followed by later more “Paleozoic-like” communities has been observed in other regions. Earliest Triassic paucity of epibionts and borers indicates significant reduction in the biotic component of taphonomic processes, including taphonomic feedback, when compared with other time intervals. Data from these Early Triassic assemblages thus indicate the initiation of both an evolutionary and an ecological rebound between Sinbad (Smithian) and Virgin (Spathian) times.

It is shown that the Moon possesses an extraordinary response to induction from the solar wind due to a combination of a high interior electrical conductivity together with a relatively resistive crustal layer into which the solar wind dynamic pressure forces back the induced field. The dark side response, devoid of solar wind pressure, is approximately that expected for the vacuum case. These data permit an assessment of the interior conductivity and an estimate of the thermal gradient in the crustal region. The discovery of a large permanent magnetic field at the Apollo 12 site corresponds approximately to the paleomagnetic residues discovered in both Apollo 11 and 12 rock samples The implications regarding an early lunar magnetic field are discussed and it is shown that among the various conjectures regarding the early field the most prominent are either an interior dynamo or an early approach to the Earth though no extant model is free of difficulties.

We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavenumbers from 333cm−1 to 1200cm−1 as a novel approach to non-destructive optical characterization of free-carrier and optical phonon properties of group III-nitride heterostructures. Undoped α-GaN, α-AlN, α-Al x Ga1−x N (x = 0.17, 0.28, 0.5), and n-type silicon (Si) doped α-GaN layers were grown by metal-organic vapor phase epitaxy (MOVPE) on c-plane sapphire (α-Al2O3). The four-parameter semi-quantum (FPSQ) dielectric lattice-dispersion model and the Drude model for free-carrier response are employed for analysis of the IR-SE data. Model calculations for the ordinary (∈ ⊥) and extraordinary (∈ ||) dielectric functions of the heterostructure components provide sensitivity to IR-active phonon frequencies and free-carrier parameters. We observe that the α-Al x Ga1−x N layers are unintentionally doped with a back ground free-carrier concentration of 1–4 1018cm−3. The ternary compounds reveal a two-mode behavior in ∈⊥, whereas a one-mode behavior is sufficient to explain the optical response for ∈||. We further provide a precise set of model parameters for calculation of the sapphire infrared dielectric functions which are prerequisites for analysis of infrared spectra of III-nitride heterostructures grown on α-Al2O3.

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10 }, {10 }, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

The infrared-optical properties of GaAs/GaN x As1−x superlattice (SL) heterostructures (0 < x < 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm−1 to 700 cm−1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm−1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm−1 in the GaN x As1−x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaN x As1−x .

In their comment “Modeling the evolution of preferences: an answer to Schubert and Cordes” (2013, this journal), Kapeller and Steinerberger claim to have identified some flaws in the formal argument developed in our paper “Role models that make you unhappy: light paternalism, social learning, and welfare” (2013, this journal). Specifically, they maintain that there is no runaway dynamic in consumption and preference values and that our model therefore always leads to a stable society. In their proof, Kapeller and Steinerberger show that their system is bounded by the highest and lowest preference and consumption levels in the population and can never escape them. Their argument does, however, not apply to the system of coupled dynamic equations we employed to model runaway consumption.

The ferroelectric properties of anisotropically strained SrTiO3 films are analyzed by detailed measurements of the complex dielectric constant as function of temperature, frequency, bias voltage and electric field direction. The strain induces a relaxor-ferroelectric phase that persists up to room temperature. However, transition temperature and ferroelectric properties strongly depend on the orientation of the electric field and therefore on the amount of structural strain in the given electric field direction. Frequency and time dependent relaxation experiments reveal the presence and properties of polar nanoregions with randomly distributed directions of dipole moments in the film.

In this study the strain states in alternating multilayers of an extrinsic O2− ion conductor yttria stabilized zirconia (YSZ) and an insulator RE2O3 (RE = Er, Y) are investigated as a function of the layer thickness. Multilayers with narrow columnar crystallites and coherent phase boundaries were grown by pulsed laser deposition (PLD). A detailed strain analysis is performed by X-Ray Diffraction XRD, measuring distinct reflections in and perpendicular to the interface planes. Because of small columnar crystallites in the layers, the interfacial strain decays by shear with increasing distance from the interface. The extent of the strained interface regions in the YSZ layers is estimated from XRD data. By using a quantitative analytical model based on the pressure dependence of the free migration enthalpy for vacancies the results are compared to former published experimental data on O2− ion conductivity and diffusion.

Oblique-angle deposition is used to fabricate indium tin oxide (ITO) optical coatings with a porous, columnar nanostructure. Nanostructured ITO layers with a reduced refractive index are then incorporated into antireflection coating (ARC) structures with a step-graded refractive index design, enabling increased transmittance into an underlying semiconductor over a wide range of wavelengths of interest for photovoltaic applications. Low-refractive index nanostructured ITO coatings can also be combined with metal films to form an omnidirectional reflector (ODR) structure capable of achieving high internal reflectivity over a broad spectrum of wavelengths and a wide range of angles. Such conductive high-performance ODR structures on the back surface of a thin-film solar cell can potentially increase both the current and voltage output by scattering unabsorbed and emitted photons back into the active region of the device.

We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.

Wire shading during thin film deposition is a promising approach to low-cost, high volume manufacturing of flexible thin film photovoltaic modules. This contribution demonstrates successful patterning of a transparent conducting oxide layer by wire shading during dynamic web coating. Continuous sputter deposition of Al-doped ZnO on a 30 cm wide polymer foil and simultaneous wire shading form 1 cm wide and 300 cm long front contact stripes for thin film photovoltaic modules. Analysing the distribution of lateral shunt resistances after separating the initial 28 stripes into 1323 pieces, yields a patterning success of 97.3 %. Thus the technique seems well suited for flexible modules from organic solar cells.

To harness the full spectrum of solar energy, optical reflections at the surface of a solar photovoltaic cell must be reduced as much as possible over the relevant solar spectral range and over a wide range of incident angles. The development of antireflection coatings embodying omni-directionality over a wide range of wavelengths is challenging. Recently, nanoporous films, fabricated by oblique-angle deposition and having tailored- and very low-refractive index properties, have been demonstrated. Tailorability of the refractive index and the ability to realize films with a very low-refractive index are properties critical in the performance of broadband, omnidirectional antireflection coatings. As such, nanoporous materials are ideally suited for developing near-perfect antireflection coatings. Here, we discuss multilayer antireflection coatings with near-perfect transmittance over the spectral range of 400−2000 nm and over widely varying angles of acceptance, 0−90°. The calculated solar optical-to-electrical efficiency enhancement that can be attained with nanoporous multilayer coatings over single-layer quarter-wave films is 18%, making these coatings highly attractive for solar cell applications.

It is investigated how figures of merits of nanocomposites are affected by structural and interaction length scales. Aside from macroscopic effects without characteristic lengths scales and atomic-scale quantum-mechanical interactions there are nanoscale interactions that reflect a competition between different energy contributions. We consider three systems, namely dielectric media, carbon-black reinforced rubbers and magnetic composites. In all cases, it is relatively easy to determine effective materials constants, which do not involve specific length scales. Nucleation and breakdown phenomena tend to occur on a nanoscale and yield a logarithmic dependence of figures of merit on the macroscopic system size. Essential system-specific differences arise because figures of merits are generally nonlinear energy integrals. Furthermore, different physical interactions yield different length scales. For example, the interaction in magnetic hard-soft composites reflects the competition between relativistic anisotropy and nonrelativistic exchange interactions, but such hierarchies of interactions are more difficult to establish in mechanical polymer composites and dielectrics.

A novel type of low-resistance ohmic contacts is demonstrated utilizing polarization-induced electric fields in thin p-type InGaN layers on p-type GaN. An increase of the hole tunneling probability through the barrier and a concomitant significant decrease of the specific contact resistance can be attributed to a reduction of the tunneling barrier width in the InGaN capping layers due to the polarization-induced electric fields. The specific contact resistance of Ni (10 nm) / Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2 × 10-2 Ω cm2 and 6 × 10-3 & cm2 were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively.