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Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I8.3.1
- Print publication:
- 2001
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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 197-202
- Print publication:
- 1999
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Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 423-428
- Print publication:
- 1999
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Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.78
- Print publication:
- 1998
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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.16
- Print publication:
- 1998
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