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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

  • T. Paskova (a1), E.B. Svedberg (a1), L.D. Madsen (a1), R. Yakimova (a1), I.G. Ivanov (a1), A. Henry (a1) and B. Monemar (a1)...

Abstract

The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques like atomic force microscopy (AFM), x-ray diffraction (XRD) in ω-2θ and ω-rocking curve measurements as well as low temperature photoluminescence (PL). PL and XRD measurements reveal rather narrow lines: full width at half maximum (FWHM) values of the strongest donor-bound exciton line are in the range from 6.0 to1.8 meV and ω-2θ FWHM values are between 80 and 23 arcsec indicating good structural quality of the films. The ω-rocking curves show a single peak for the thinnest films with a FWHM of 250 arcsec and multiple peaks with FWHM of about 250-350 arcsec in thicker films indicating the formation of several high-quality domains when increasing either thickness or growth rate. Optical microscopy and AFM images reveal a domain type of morphology and also show an appearance of spiral hillocks in layers grown at growth rates exceeding a critical value. We interpret these results as dominating 2D multilayer growth at low growth rates, and competing 2D multilayer and spiral growth mechanisms at high growth rates.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G3.16(1999)

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References

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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

  • T. Paskova (a1), E.B. Svedberg (a1), L.D. Madsen (a1), R. Yakimova (a1), I.G. Ivanov (a1), A. Henry (a1) and B. Monemar (a1)...

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