Research Article
Surface Ordering of MBE Grown 001 Ga1−xAlxAs- A Theoretical Study
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- 15 February 2011, 151
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Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE
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- 15 February 2011, 159
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Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)
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- 15 February 2011, 171
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Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator
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- 15 February 2011, 181
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Study of Transport Through Low-Temperature GaAs Surface Insulator Layers
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- 15 February 2011, 187
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A Gate Breakdown Mechanism in Mesfets and HEMTs
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- 15 February 2011, 193
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Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material
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- 15 February 2011, 199
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Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures
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- 15 February 2011, 205
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A High Performance Optically Gated Heterostructure Thyristor Passivated with LT-GaAs
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- 15 February 2011, 217
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Picosecond High-Voltage Pulses Generation Using Low-Temperature (LT) GaAs
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- 15 February 2011, 223
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Multi-Hundred Gigahertz Photodetector Development Using LT GaAs
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- 15 February 2011, 227
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Long Wavelength Characterization of Internal Quantum Efficiency in LT-GaAs MSM Photodiodes
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- 15 February 2011, 233
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Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs
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- 15 February 2011, 239
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Molecular Beam Epitaxy of Low Temperature Grown GaAs Photoconductors
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- 15 February 2011, 245
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A New Structure for a Superconducting Field Effect Transistor
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- 15 February 2011, 251
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The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs
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- 15 February 2011, 259
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InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature
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- 15 February 2011, 265
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Growth and Characterization of Low Temperature InP by Gas Source MBE
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- 15 February 2011, 271
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Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy
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- 15 February 2011, 277
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Low-Temperature Growth and Characterization of InP Grown by Gas-Source Molecular-Beam Epitaxy
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- 15 February 2011, 283
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