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Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures

Published online by Cambridge University Press:  15 February 2011

S. Gupta ,
G. Mourou ,
F. W. Smith  and
A. R. Calawa
S. Gupta
Affiliation:
Ultrafast Science Laboratory, Rm. 1006 IST Bldg., 2200 Bonisteel Blvd., University of Michigan, Ann Arbor, MI 48109
G. Mourou
Affiliation:
Ultrafast Science Laboratory, Rm. 1006 IST Bldg., 2200 Bonisteel Blvd., University of Michigan, Ann Arbor, MI 48109
F. W. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA
A. R. Calawa
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA
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Abstract

The ultrafast carrier dynamics in GaAs, In0.52Al0 48As on InP, and In0.53Ga0.47As on InP, grown by molecular-beam-epitaxy (MBE) at low substrate temperatures, are investigated. A reduction in the carrier lifetime is observed with decreasing growth temperatures. The shortest carrier lifetimes of typically a picosecond (ps) are obtained at the lowest growth temperature range of 150 – 200 'C. Femtosecond optical absorption and reflectance measurements have been used to verify the sub-picosecond carrier lifetimes. Photoconductive switching measurements on these materials, measured using the technique of electro-optic sampling have further confirmed the sub-picosecond carrier lifetimes, and have also resulted in the generation of subpicosecond electrical signals. These short electrical pulses have been used for a variety of ultrafast optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 205
Copyright
Copyright © Materials Research Society 1992

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References

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