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Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures

  • S. Gupta (a1), G. Mourou (a1), F. W. Smith (a2) and A. R. Calawa (a2)

Abstract

The ultrafast carrier dynamics in GaAs, In0.52Al0 48As on InP, and In0.53Ga0.47As on InP, grown by molecular-beam-epitaxy (MBE) at low substrate temperatures, are investigated. A reduction in the carrier lifetime is observed with decreasing growth temperatures. The shortest carrier lifetimes of typically a picosecond (ps) are obtained at the lowest growth temperature range of 150 – 200 'C. Femtosecond optical absorption and reflectance measurements have been used to verify the sub-picosecond carrier lifetimes. Photoconductive switching measurements on these materials, measured using the technique of electro-optic sampling have further confirmed the sub-picosecond carrier lifetimes, and have also resulted in the generation of subpicosecond electrical signals. These short electrical pulses have been used for a variety of ultrafast optoelectronic applications.

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Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures

  • S. Gupta (a1), G. Mourou (a1), F. W. Smith (a2) and A. R. Calawa (a2)

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