Article contents
Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE
Published online by Cambridge University Press: 15 February 2011
Abstract
Materials grown at a low temperature by MBE and subsequently annealed at a high temperature have an excess amount of Arsenic and have demonstrated high dielectric breakdown strength and low carrier lifetime. These properties have found applications in analog and switching power applications, in picosecond pulse generation, in device isolation and in the selective intermixing of heterostructures. This paper reviews these applications.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
REFERENCES
- 3
- Cited by