Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-19T02:03:35.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Beam Epitaxy of Low Temperature Grown GaAs Photoconductors

Published online by Cambridge University Press:  15 February 2011

D. R. Dykaar ,
D. J. Eaglesham ,
U. D. Keil ,
B. I. Greene ,
P. N. Saeta ,
L. N. Pfeiffer ,
R. F. Kopf ,
S. B. Darack  and
K. W. West
D. R. Dykaar
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
U. D. Keil
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
B. I. Greene
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
P. N. Saeta
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. N. Pfeiffer
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. B. Darack
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

We report on the characterization of Low Temperature (LT) epitaxial growth of GaAs photoconductors. Samples were characterized using electro-optic sampling, transient femtosecond reflectivity, transmission electron microscopy, and pulsed terahertz spectroscopy as a function of growth temperature, As4 flux, doping and anneal conditions. We find the strongest effect on pulsewidth to be the temperature of an ex-situ rapid thermal anneal. In addition we find evidence of a temperature threshold for As precipitation. For more than an order of magnitude change in As precipitate density we find no corresponding change in electrical pulsewidth. Doping to 1017/cm3 also produces no change in the measured electrical response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 245
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Smith, F.W., Lee, H.Q., Diadiuk, V., Hollis, M.A., Calawa, A.R., Gupta, S., Frankel, M., Dykaar, D.R., Mourou, G.A., and Hsiang, T.Y., Applied Physics Letters, 54, (10), 890 (1989).Google Scholar
2.Chwalek, J.M., Whitaker, J.F., and Mourou, G.A., OSA Proceedings on Picosecond Electronics and Optoelectronics, Vol.9 of the OSA Proceeding Series, Sollner, T.C.L.G. and Shah, J., eds. (Optical Society of America, Washington, D.C., 1991), pp. 15–19.Google Scholar
3.Eaglesham, D.J., Pfeiffer, L.N., West, K.W., and Dykaar, D.R., Applied Physics Letters, 58 (1), 65 (1991).Google Scholar
4.Gong, T., and Fauchet, P.M., OSA Proceedings on Picosecond Electronics and Optoelectronics, Vol.9 of the OSA Proceeding Series, Sollner, T.C.L.G. and Shah, J., eds. (Optical Society of America, Washington, D.C., 1991), pp. 253–259.Google Scholar
5.Valdmanis, J.A., and Mourou, G.A., IEEE J. Quantum Electronics, QE–22, 69 (1986).Google Scholar
6.Chwalek, J.M. and Dykaar, D.R., Review of Scientific Instruments, 61 (4), 1273 (1990).Google Scholar
7.Mourou, G.A., Stancampiano, C.V., Antonetti, A., and Orszag, A., Applied Physics Letters, 39, 295 (1981).10.1063/1.92719Google Scholar
8.Smith, P.R., Auston, D.H., and Nuss, M.C., IEEE J. Quantum Electron. 24, 255 (1988).10.1109/3.121Google Scholar
9.VanExter, M., Fattinger, Ch., and Grischkowsky, D., Applied Physics Letters 55 337 (1989).10.1063/1.101901Google Scholar
10.DeFonzo, A.P., Jarwala, M., and Lutz, C., Applied Physics Letters 50, 1155 (1987).10.1063/1.97947Google Scholar
11.Dykaar, D.R., Greene, B.I., Federici, J.F., Levi, A.F.J., Pfeiffer, L.N., and Kopf, R.F., Applied Physics Letters 59 (3), 262 (1991).Google Scholar
12.Greene, B.I., Federici, J.F., Dykaar, D.R., Jones, R.R., and Bucksbaum, P.H., Applied Physics Letters 59 (8), 893 (1991).Google Scholar
13.Saeta, P.N., Federici, J.F., Greene, B.I., and Dykaar, D.R., Submitted to Applied Physics Letters (1991).Google Scholar