Microscopy and Microanalysis: Volume 16 -

Establishment of Annular Dark-Field Scanning Confocal Electron Microscopy using a Double Aberration-Corrected Microscope
A Hashimoto, P Wang, M Shimojo, K Mitsuishi, AI Kirkland, PD Nellist, M Takeguchi
Published online by Cambridge University Press:

01 August 2010, pp. 1888-1889
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices
CJ Humphreys, RA Oliver, MJ Kappers, SE Bennett, D Parris, P Dawson, MJ Godfrey, PH Clifton, DJ Larson, RM Ulfig, DW Saxey, A Cerezo
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01 August 2010, pp. 1890-1891
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Structure and Composition of Metal-Doped HfO2 Gate Oxides in CMOS Devices Studied by High Resolution STEM and EELS
J Bruley, MM Frank, V Narayanan, B Mendis, M Gass
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01 August 2010, pp. 1892-1893
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Composition Analysis of a Thin Gate Oxide Layer Using Model-Based EELS Quantification
Q Jin
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01 August 2010, pp. 1894-1895
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

HRTEM and Nano-Beam Diffraction Analysis of Metal-Molecule Interface
P Li, J Chen, M Malac, H Yan, A Bonifas, R McCreery
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01 August 2010, pp. 1896-1897
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Silicon Chip Teardown to the Atomic Scale – Challenges Facing the Reverse Engineering of Semiconductors
D James
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01 August 2010, pp. 1898-1899
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Modern Integrated Circuits: The Ultimate Engineered Material
E Keyes, J Abt, L Gunawan
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01 August 2010, pp. 1900-1901
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

An Interface Study Using Electron Energy-Loss Near-Edge Structure
Q Jin
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01 August 2010, pp. 1902-1903
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Composition Modulation in High-k Hafnium Silicate Films
X Wu, J Liu, WN Lennard, D Landheer
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01 August 2010, pp. 1904-1905
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Challenges and Opportunities in Characterizing Modern Nano-Devices
L Pan, X Lin, B Miner, K Johnson
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01 August 2010, pp. 1906-1907
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Correlating Nanoscale Defects with Electronic Properties in MgO Magnetic Tunnel Junctions by Aberration-Corrected STEM-EELS
PY Huang, JJ Cha, JC Read, H-W Tseng, Y Li, PG Gowtham, RA Buhrman, DA Muller
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01 August 2010, pp. 1908-1909
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

STEM/EDS Spectral Imaging of Magnetic Tunnel Junction Nano-Devices
P Zhang, H Wang
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01 August 2010, pp. 1910-1911
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Three-Dimensional Characterization of Magnetic Tunnel Junctions for Read Head Applications by Atom-Probe Tomography
DK Schreiber, Y-S Choi, Y Liu, DN Seidman, AK Petford-Long
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01 August 2010, pp. 1912-1913
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Comparison of Exchange-Bias Using Epitaxial and Polycrystalline Ir0.2Mn0.8 Antiferromagnetic Thin Films: a TEM and Lorentz TEM Study
A Kohn, A Kovacs, S-G Wang, C Wang, J Dean, T Schrefl, A Zeltser, MJ Carey, AK Petford-Long, RC C Ward
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01 August 2010, pp. 1914-1915
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Automatic Quantitative Measurements In SEM
S Babin
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01 August 2010, pp. 1916-1917
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Energy Filtered Nano-Diffraction Application in Growth Orientation Analysis of Magnetic Thin Films
L Chen, H Wang
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01 August 2010, pp. 1918-1919
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Three-Dimensional Imaging of Semiconductor Device Structure Using Contrast Tuning EFTEM Tomography
Q Jin
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01 August 2010, pp. 1920-1921
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

An application of energy-filtered elemental mapping tomography in semiconductor device analysis
Q Jin
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01 August 2010, pp. 1922-1923
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe
C Vartuli, G Lian, YS Choi, J Chung
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01 August 2010, pp. 1924-1925
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Two-Dimensional Dopant Profiling in Silicon by SEM in Combination with Electrostatic Calculations
B Wolpensinger, MA Kessler, PP Altermatt
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01 August 2010, pp. 1926-1927
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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

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Volume 16 - July 2010

Physical Sciences Symposia

3DEM: Quantitative Analysis at the Nano and Microscale using Tomographic Techniques

Abstract

Establishment of Annular Dark-Field Scanning Confocal Electron Microscopy using a Double Aberration-Corrected Microscope

Inside Modern Micro-devices at the Atomic Scale

Abstract

Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices

Structure and Composition of Metal-Doped HfO2 Gate Oxides in CMOS Devices Studied by High Resolution STEM and EELS

Composition Analysis of a Thin Gate Oxide Layer Using Model-Based EELS Quantification

HRTEM and Nano-Beam Diffraction Analysis of Metal-Molecule Interface

Silicon Chip Teardown to the Atomic Scale – Challenges Facing the Reverse Engineering of Semiconductors

Modern Integrated Circuits: The Ultimate Engineered Material

An Interface Study Using Electron Energy-Loss Near-Edge Structure

Composition Modulation in High-k Hafnium Silicate Films

Challenges and Opportunities in Characterizing Modern Nano-Devices

Correlating Nanoscale Defects with Electronic Properties in MgO Magnetic Tunnel Junctions by Aberration-Corrected STEM-EELS

STEM/EDS Spectral Imaging of Magnetic Tunnel Junction Nano-Devices

Three-Dimensional Characterization of Magnetic Tunnel Junctions for Read Head Applications by Atom-Probe Tomography

Comparison of Exchange-Bias Using Epitaxial and Polycrystalline Ir0.2Mn0.8 Antiferromagnetic Thin Films: a TEM and Lorentz TEM Study

Automatic Quantitative Measurements In SEM

Energy Filtered Nano-Diffraction Application in Growth Orientation Analysis of Magnetic Thin Films

Three-Dimensional Imaging of Semiconductor Device Structure Using Contrast Tuning EFTEM Tomography

An application of energy-filtered elemental mapping tomography in semiconductor device analysis

Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe

Two-Dimensional Dopant Profiling in Silicon by SEM in Combination with Electrostatic Calculations

Microscopy and Microanalysis

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Volume 16 - July 2010

Physical Sciences Symposia

3DEM: Quantitative Analysis at the Nano and Microscale using Tomographic Techniques

Abstract

Inside Modern Micro-devices at the Atomic Scale

Abstract