We have successfully synthesized GexSe1-x (x = 0.225) glass samples and incorporated commercially produced (Protein Mods) carbon nanotubes (CNTs) into the glass samples. We investigated the glass transition temperature (Tg) using modulated differential scanning calorimetry (MDSC). CNTs, being a very hygroscopic material as well as oxygen absorbing material, needed to be cleaned under vacuum with the hot water-bath to get rid of contaminants. We used contaminant-free CNTs for our study. The same cleaning process was used to prepare GexSe1-x (x = 0.225) glass samples with and without CNTs. The base GexSe1-x (x = 0.225) glass sample has a Tg of 220°C. The Tg was found to be independent of starting materials (germanium and selenium) from different sources as well as hot water-bath temperature. The Tg was found to be lower when 5% CNT's by mass was added to the base GexSe1-x (x = 0.225) glass sample. For 10% incorporation, the Tg was found to increase from that of 5% and it was found to decrease from that of 10% when 15% CNTs was added to the base glass sample. We also found that the Tg for GexSe1-x (x = 0.225) glass samples with the incorporation of 5% not-cleaned CNTs was 10oC higher, indicating the sensitivity of Tg on contaminants. Further, it was found that the variation of Tg with the incorporation of bulk carbon into the GexSe1-x (x = 0.225) glass samples was inconsistent compared to the contaminant-free CNTs incorporation.

As determined by bioassay of segmented soil columns, a,a,a-trifluoro-2,6-dinitro-N,N-dipropyl-p-toluidine (trifluralin), N-butyl-N-ethyl-a,a,a-trifluoro-2,6-dinitro-p-toluidine (benefin), and 4-(methylsulfonyl)-2,6-dinitro-N,N-dipropylaniline (nitralin) varied in their leachability in a clay loam soil, even though their water solubility is the same. Nitralin was by far the more easily leached, benefin was least leached, and trifluralin slightly more so than benefin. Four A-in or more of water readily leached nitralin deep enough into the soil in amounts great enough to adversely affect the root growth of sensitive crop plants. Trifluralin and benefin were leached into the soil in relatively minute amounts, and these amounts were not great enough to affect root growth of sensitive crop plants when at least 0.5-in of untreated soil separated the seed from the layer of soil in which the herbicides had been mixed. The apparent breakdown product of nitralin present in moist soil was leached as readily as nitralin.

Pyruvate kinase activity was studied in kidney extracts of mice from various sources. One C57BL/6J female among several hundred examined expressed activity approximately one half of the normal level. This animal transmitted the trait, and a single gene responsible for the activity difference was identified and mapped to chromosome 9. Linkage with Mod-1 and dilute was established. A spontaneous mutation in the C57BL/6J strain apparently was responsible for the variant pyruvate kinase.

Metal induced growth (MIG) was used to form epitaxial thin films of microcrystalline Si (μc-Si). By substituting Al as the catalyst metal in place of the usual Ni, x-ray diffraction (XRD) confirmed that μc-Si was successfully grown at temperatures between 350-525°C. At 525°C, a preferred orientation of (220) Si was observed with additional (111) and (311) Si orientations, while a temperature of 350°C resulted in a shift in preferred orientation to (111) Si. The lower limit for Al thickness was found to be between 10-20 nm with little crystallization and a smooth surface observed at 10 nm with XRD and SEM, respectively. Electrical measurements on Schottky diodes revealed space-charge limited conduction (SCLC) with an exponential distribution of trap levels due to diffusion of Al atoms into the Si, which was supported by analysis with energy dispersive x-ray spectroscopy (EDX) near the film surface. By depositing a thin layer of Co on top of Al prior to sputtering, the films exhibited increased crystallinity and a more uniform surface likely due to increased confinement of Al atoms. Electrical measurements demonstrated a shift from SCLC to thermionic emission in resulting Schottky diodes.

Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

Adequate intake of folic acid by women during very early pregnancy can markedly reduce risk of the development of neural-tube defects (NTD). The effectiveness of advice to women to take folic acid supplements is limited, mainly because 50% of pregnancies are unplanned. However, mandatory folic acid food fortification programmes in North America have been very successful in reducing NTD rates. In Ireland higher rates of pregnancies are affected by NTD and the option of termination is illegal. Consequently, the much higher burden of disease makes primary prevention of NTD an important public health issue in Ireland. During 2006 a decision was taken in Ireland to initiate mandatory folic acid fortification of most bread to prevent NTD. Priority work was immediately undertaken to establish reliable and comprehensive baseline information on factors that will be affected by fortification. This information included data on: the national prevalence of pregnancies affected by NTD; the current extent of voluntary folic acid fortification of food on the Irish market and how it affects folic acid intakes; blood folate status indicators assessed for various subgroups of the Irish population. In addition, scientific developments that have arisen since 2006 relating to the risks and benefits of folic acid intake are under ongoing review. The present paper summarises the rationale for mandatory folic acid food fortification in Ireland and recent scientific developments relating to risks and benefits of folic acid intake. In this context, preliminary findings of baseline monitoring investigations in Ireland are considered.

A metal-induced growth (MIG) process was employed to deposit thin films of microcrystalline silicon (μc-Si) for solar cell applications. Due to different grain orientations of the crystals, the absorption coefficient of μc-Si is about 10 times higher than the absorption coefficient of single crystalline Si. The properties of the Si film were investigated resulting from variations in several parameters. A range of Ni and Co thicknesses were examined from 7.5 nm to 60 nm including combinations of the two, while the dc sputtering power was stepped up from 150 W to 225 W. The structure of the resulting film was studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD). SEM of the film revealed that 5 hr of Si deposition at 150 W yields a film thickness of 6.5 μm and a maximum grain size of about 0.6 μm. EDS data showed that at the middle of the Si film the atomic percentage of the Si was 99.17%. XRD data showed that the dominant crystal orientation is {220}. To characterize the photovoltaic properties of the μc-Si, Schottky photodiodes were fabricated. Ni alone as the seed layer resulted in ohmic behavior. With Co only, MIG formed a rectifying contact with open-circuit voltage (V∝). The combination of Co layered over Ni formed better thin films and gave a Voc of 0.24 V and short-circuit current density (Jsc) of 5.0 mA/cm2 since the Co prevents Ni contamination of the top of the grown Si layer.

The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.

Unique nanowire growth was accomplished at 575 °C by the metal-induced growth (MIG) method. This involved a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication, and the Ni-induced case was successful in demonstrating that metal species should be the dominant factor for growing nanowires. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application of the MIG nanowire was proved by fabricating nanoscale contacts.

In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins.

After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.

Quality Si thin films were grown by the metal-induced growth (MIG) method. Metal (Co, Ni, or mixing of Co and Ni) was thermally evaporated on a 200 nm-SiO2 coated Si wafer. Si sputtering was performed at 600 – 620 °C in a dc magnetron system. The reaction of Si and metal first formed a silicide (CoSi2 or NiSi2) layer and further Si sputtering grew a Si film above it. The grown Si films were practically fabricated for Schottky photodiodes and electrically measured under one sun scan illumination (100 mW/cm2).