15 results
UV Raman Study of A1(LO) and E2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G9.7
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- 2000
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 221-226
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- 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.22
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- 1998
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A Model for Indium Incorporation in the Growth of InGaN Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 85
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- 1996
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New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 307
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- 1995
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Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 397 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 631
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- 1995
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AlGaInN Quaternary Alloys by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 219
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- 1995
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Low-Temperature Growth of High Quality InxGa1−xN by Atomic Layer Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 213
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- 1995
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Self-limited growth of InAs at 480 °C
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- Journal:
- Journal of Materials Research / Volume 9 / Issue 12 / December 1994
- Published online by Cambridge University Press:
- 03 March 2011, pp. 3022-3024
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- December 1994
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Atomic Layer Epitaxy of GaAs on Ge Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 647
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- 1989
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Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 679
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- 1989
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Laser Selective Area Epitaxy for the Potential of Optoelectronic Integration
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- Journal:
- MRS Online Proceedings Library Archive / Volume 158 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 377
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- 1989
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Molecular Beam Epitaxial Growth of Gaas on Silicon with Buried Implanted Oxides
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- MRS Online Proceedings Library Archive / Volume 107 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 513
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- 1987
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Laser Enhanced Selective Epitaxy of ιii-V Compounds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 101 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 285
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- 1987
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Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 91 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 99
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- 1987
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