The current approach of depositing a low temperature then annealed AlN or GaN buffer for the growth of GaN on sapphire results in a high dislocation density. These dislocations thread through the GaN layer to the surface. Reducing their density either by growing thicker films or using a strained layer superlattice is ineffective. Two new approaches for AlN/GaN buffer layer growth for GaN on sapphire have been employed: Atomic Layer Epitaxy (ALE) and Molecular Stream Epitaxy (MSE). ALE is distinguished by organo-metallic/ammonia separation while MSE is distinguished by cyclic annealing of the growing film. Both ALE and MSE enhance two dimensional growth of single crystal GaN on sapphire. The structural quality of epitaxial GaN grown on these buffer layers was studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The initial result for the ALE buffer shows an improved quality GaN film with lower defect densities. The MSE grown buffer layer closely resembles that of conventionally grown MOCVD buffer layers observed by others, with dislocations threading through the GaN epilayer. The effects of these buffer layers on the structural and optical properties of GaN grown on sapphire will be presented.