No CrossRef data available.
Article contents
Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition
Published online by Cambridge University Press: 15 February 2011
Abstract
Direct writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996