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Laser Enhanced Selective Epitaxy of ιii-V Compounds

Published online by Cambridge University Press:  26 February 2011

N.H. Karam ,
H. Liu ,
I. Yoshida ,
T. Katsuyama ,
S.M. Bedair ,
N. El-Masry ,
B. Jaing ,
A.S.M. Salih  and
G. Rozgonyi
N.H. Karam
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
H. Liu
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
I. Yoshida
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
T. Katsuyama
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
S.M. Bedair
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
N. El-Masry
Affiliation:
Dept. of Materials Engineering, North Carolina State University, Raleigh, NC 27695
B. Jaing
Affiliation:
Dept. of Materials Engineering, North Carolina State University, Raleigh, NC 27695
A.S.M. Salih
Affiliation:
Dept. of Materials Engineering, North Carolina State University, Raleigh, NC 27695
G. Rozgonyi
Affiliation:
Dept. of Materials Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Selective epitaxial growth of III-V compounds based on GaAs has been achieved using Ar+ ion laser assisted chemical vapor deposition (LCVD) on GaAs substrates. The growth rate, at carefully selected growth conditions, can be controlled to a few Å/s at bias temperatures as low as 250°C by conventional LCVD multi-scan technique. Typical Gaussian thickness profiles are achieved by this growth technique. On the other hand, flat top thickness profiles are achieved with direct writing of GaAs mono-layers by laser assisted atomic layer epitaxy (LALE). X-ray topography is demonstrated as a powerful tool for characterizing the grown films and photoluminescence shows that the quality of the grown films are comparable with those grown by conventional MOCVD or ALE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 285
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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