Vegetables are an important source for the essential vitamins and minerals that are necessary for optimal health. This research investigated changes in vegetable intake over time in the Korean population from 1998 to 2017, focusing on preparation methods of vegetables and location of consumption. This cross-sectional study is based on the Korea National Health and Nutrition Examination Survey (KNHANES) that was established in 1998 to assess the health and nutritional status of the South Korean population. This research utilised information from 1998 to 2017 which is the extent of all available KNHANES data. Vegetable consumption was grouped, according to preparation methods and common eating locations. Both crude and age-standardised means of vegetable intake were derived via a 24-h dietary recall. All participants who completed a 24-h dietary recall survey were selected for the analyses. This included 109 220 individuals (49 069 men and 60 151 women) over the course of 20 years of the KNHANES. Total vegetable intake decreased over time (Pfor trends < 0·001), specifically, steamed and salted vegetables (Pfor trends < 0·001). In contrast, Koreans consumed noticeably more raw vegetables from 1998 to 2017 (Pfor trends < 0·001). Vegetable intake at home significantly declined (Pfor trends < 0·001), while that eaten at restaurants or outside the home increased greatly (Pfor trends < 0·001). Over 20 years, Koreans have ingested decreasing amounts of vegetables, but the intake of raw vegetables has escalated. However, the location of vegetable consumption has changed, with an increase at both restaurants and outside the home (approximately 70·0 %).

We have observed the inconsistent findings from various studies on twin pregnancy outcomes obtained by assisted reproductive technology and spontaneous conception. In most studies, however, the concrete chorionicity, regarded as a confounding factor for predicting the perinatal outcomes of twin pregnancies, has not been determined. The purpose of this study was to compare obstetric and perinatal outcomes of only the dichorionic twin pregnancies according to the methods of conception: spontaneous and in-vitro fertilization (IVF). The twin pairs with dichorionicity reported from 1995 to 2008 were investigated and we divided them into two groups which consisted of 286 and 134 twins by spontaneous conception and IVF, respectively. Odds ratios for associations between IVF and pregnancy outcomes were analyzed after adjustment for maternal age and parity. There were no risk differences between the two groups regarding the obstetric complications, which include preterm delivery, preterm labor, preterm premature rupture of membranes, preeclampsia, placenta previa, and abruption. Any differences were not shown in the two groups for the risk estimates of perinatal outcomes, such as low birthweight, very low birthweight, small for gestational age, Apgar scores of < 7 at 5 minutes, discordance in birthweights, congenital anomalies and mortality. However, twins conceived after IVF were less likely to be admitted to the neonatal intensive care unit than those conceived spontaneously (adjusted OR 0.488; 95% confidence interval 0.261–0.910). In the cases of dichorionic twins, IVF may not be associated with adverse perinatal and obstetric outcomes compared with spontaneous conception.

The Ni silicide-mediated phase transformation of amorphous to crystalline silicon (c-Si) was studied using transmission electron microscopy. Amorphous silicon (a-Si) films coated with very thin Ni layer (∼10-1Å) were annealed at various temperatures. Randomly oriented NiSi2 precipitates were observed in the Ni deposited a-Si film annealed at 400°C. The nucleation of the epitaxial c-Si has occurred on the {111} faces of the octahedral NiSi2 precipitate at 430°C and then caused to the variation in the shape of the NiSi2 precipitates. During the growth of c-Si, the needle-like morphology developed from the migration of NiSi2 precipitates through the a-Si matrix leaving a trail of c-Si. The collision of a migrating NiSi2 precipitate with a stationary NiSi2 precipitates in the a-Si film gave rise to the change in the morphology of the growing Si grain and the formation of additional c-Si needles on variants of the <111> direction.

We report a new Ni/Pt/Au (20/30/80 nm) metallization scheme to achieve a low ohmic contacts to p-type GaN with a carrier concentration of 9.4 × 1016 cm-3. A Mg-doped GaN layer (0.5 μm) was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). All metal thin films were deposited on the p-GaN layer in an electron-beam evaporation system. Samples were annealed by a rapid thermal annealing (RTA) process at a range of temperatures from 300 °C to 850 °C under a flowing Ar atmosphere. A circulartransmission line model (c-TLM) was employed to calculate the specific contact resistance, and current-voltage (I-V) data were measured with HP4155A. The Ni/Pt/Au contacts without the annealing process showed nearly rectifying characteristics. The ohmic contacts were formed on the samples annealed at 500 °C for 30 sec and the I-V data showed a linear behavior. The specific contact resistance was 2.1 × 10-2 Ωcm2. However with increasing the annealing temperature above 600 °C, ohmic contacts were again degraded. Auger electron spectroscopy (AES) depth profiles were used to investigate the interfacial reactions between the trilayer and GaN. AES results suggested that Pt plays a significant role in forming ohmic contact as an acceptor at the interface. Atomic force microscope (AFM) also showed that the samples with good ohmic contact have very smooth surface.

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

Microstructures and interdiffusions of Pt/Ti/SiO2/Si and RuO2/SiO2/Si during annealing in O2 were investigated using x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The degree of oxidation and the interdiffusion of elements have remarkably increased with increasing temperature above 500 °C for the Pt/Ti/SiO2/Si case. The generation of Pt hillocks commenced at 500 °C. The Pt-silicide phase was also observed near the TiOx/SiO2 interface. The microstructural variations occurred to only a small amount for the RuO2/SiO2/Si case over the temperature range 300 – 700 °C. While there was no hillock formation, the RuO2 film surface was roughened by the thermal grooving phenomenon. A thin interlayer phase was found at the RuO2/SiO2 interface.

The microstructural variation and the interdiffusion of Pt (80 nm)/Ti (70 nm)/SiO2/Si during annealing in O2 were investigated using Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. While the as-deposited and 400 °C annealed samples showed well-defined layer structures without any significant interfacial reaction, the degree of oxidation remarkably increased with increasing temperature above 500 °C. The PtTi alloy phase with Pmma structure (AuCd type) was observed from the 500 °C annealed sample. Drastic interdiffusion occurring above 600 °C changed the Pt/Ti bilayer into a very entangled structure. Some TiO2 phases were exposed to the ambient between Pt hillocks. In addition, a small amount of Pt-silicide was found near the TiOx/SiO2 interface.

The unusual sigmoidal behavior between electrical resistivity and inverse temperature in polycrystalline porous SnO2 was intensively investigated by detecting the localized traps formed at the interparticle through the measurement of Isothermal Capacitance Transient Spectroscopy. A trap of 1.0 eV was evaluated at a higher temperature range of 460–500 °C, and 0.6 eV trap at a lower temperature range 200–280 °C. It seems that the trap of 1.0 eV originates from O2− and 0.6 eV from O− defect center. Time constants which were determined at the peak position of ICTS spectra, S(t), were increased with the increase of temperature at the intermediate temperature range, indicative of the competition among various kinds of traps. The active competition among various traps is one of the causes that result in prominent gas sensitivity in polycrystalline porous SnO2.