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Microstructures and interdiffusions of Pt/Ti electrodes with respect to annealing in the oxygen ambient

Published online by Cambridge University Press:  03 March 2011

Kyu Ho Park
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
Cha Yeon Kim
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
Young Woo Jeong
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
Hyun Ja Kwon
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
Jeong Soo Lee
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
Sung Tae Kim
Affiliation:
GoldStar Central Research Laboratory, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, Korea
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Abstract

The microstructural variation and the interdiffusion of Pt (80 nm)/Ti (70 nm)/SiO2/Si during annealing in O2 were investigated using Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. While the as-deposited and 400 °C annealed samples showed well-defined layer structures without any significant interfacial reaction, the degree of oxidation remarkably increased with increasing temperature above 500 °C. The PtTi alloy phase with Pmma structure (AuCd type) was observed from the 500 °C annealed sample. Drastic interdiffusion occurring above 600 °C changed the Pt/Ti bilayer into a very entangled structure. Some TiO2 phases were exposed to the ambient between Pt hillocks. In addition, a small amount of Pt-silicide was found near the TiOx/SiO2 interface.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Sheppard, L. M., Ceram. Bull. 71, 85 (1992).Google Scholar
2Kugimiya, K., Ueda, I., and Iizima, K., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 179.Google Scholar
3Araujo, C. A., McMillan, L. D., Melnick, B. M., Cuchiaro, J. D., and Scott, J. F., Ferroelectrics 104, 241 (1990).Google Scholar
4Sakuma, T., Yamamichi, S., Matsubara, S., Yamaguchi, H., and Miyasaka, Y., Appl. Phys. Lett. 57, 2431 (1990).CrossRefGoogle Scholar
5Jones, R. E., Maniar, P. D., Olowolafe, J. O., Campbell, A. C., and Mogab, C. J., Appl. Phys. Lett. 60, 1022 (1992).CrossRefGoogle Scholar
6Polla, D. L., Ye, C., Schiller, P., Taraagawa, T., Robbins, W. P., Glumac, D., and Hsueh, C-C., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 55.Google Scholar
7Takemura, K., Sakuma, T., Matsubara, S., Yamamichi, S., Yamaguchi, H., and Miyasaka, Y., Proc. 4th Int. Symp. on Integrated Ferroelectrics (1992), p. 481.Google Scholar
8Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U., and Hoesler, W., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 123.Google Scholar
9Olowolafe, J. O., Jones, R. E. Jr., Campbell, A. C., Hegde, R. I., and Mogab, C. J., J. Appl. Phys. 73, 1764 (1993).CrossRefGoogle Scholar
10Cullity, B. D., Elements of X-Ray Diffraction (Addison-Wesley Publishing Company Inc., Reading, MA, 1978), p. 507.Google Scholar
11JCPDS card no. 19-917.Google Scholar
12Binary Alloy Phase Diagrams, Vol. 2 (American Society for Metals, Metals Park, OH, 1986), pp. 1915, 1916.Google Scholar
13Buseck, P. R., Cowley, J. M., and Eyring, L., High-Resolution Transmission Electron Microscopy and Associated Techniques (Oxford University Press Inc., New York, 1988), p. 420.Google Scholar