9 results
Electrical Measurement of the Vanadium Acceptor Level in 4H- and 6H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B05-06
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- 2006
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Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.59
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- 2002
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Effect of Varying Oxidation Parameters on the Generation of C-Dangling Bond Centers in Oxidized SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 51
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- 1999
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EPR Study of the Role of Hydrogen in the Defect Formation Upon Heat Treatment of Oxidized SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 513 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 433
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- 1998
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Ge-Related Interfacial Defects in Sige Alloy Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 405 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 453
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- 1995
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A Study of Dopants in Diamond Using Electron Paramagnetic Resonance Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 416 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 367
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- 1995
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Ge-Related Interfacial Defects In SiGe Alloy Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 573
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- 1995
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Defect Centers Formed During Wet Oxidation of Si-Ge/Si Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 199
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- 1991
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Experimental Determination for the Transition Temperature Between Ballistic and Hopping Controlled Recombination in a-Si:H
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- Journal:
- MRS Online Proceedings Library Archive / Volume 192 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 305
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- 1990
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