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A Study of Dopants in Diamond Using Electron Paramagnetic Resonance Spectroscopy

Published online by Cambridge University Press:  10 February 2011

M. E. Zvanut ,
Shigang Zhang  and
W. E. Carlos
M. E. Zvanut
Affiliation:
University of AL at Birmingham, Birmingham, AL 35294-1170
Shigang Zhang
Affiliation:
University of AL at Birmingham, Birmingham, AL 35294-1170
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington D.C. 20375
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Abstract

Chemical incorporation of impurities into diamond films is important for both electronic and optoelectronic applications. The study reveals the effect of incorporated dopants in diamond films using electron paramagnetic resonance (EPR), a non-destructive highly sensitive spectroscopy. Both the stress and damage associated with dopants is assessed using the center line of the EPR spectra. The films studied were grown by chemical vapordeposition and doped with phosphorus by two different methods, fast ion doping and chemical incorporation. The results suggest that damage increases with increased dopant density and saturates with dopant densities about l×1020 cm-3. Although electrical measurements did not reveal n-type conductivity, at low fluences the films grown using fast ion doping exhibited a density of 1017 cm-3 shallow substitutional phosphorus sites. Comparison of different dopants in the films doped by chemical incorporation show that phosphorus produces ten times greater damage than boron. Overall, the study illustrates that EPR may be used as a quick nondestructive characterization tool for diamond films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 367
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Gildenblat, G. Sh., Grot, S.A., and Badzian, A., Proceed. IEEE 79, 647 (1991).Google Scholar
2. Ravi, K.V., Mat. Sci. and Engr. E 19, 203 (1993).Google Scholar
3. Brandes, G.R., Beetz, C.P., Feger, C.A., Wright, R.L., Diamond and Related Materials 4, 586 (1995).Google Scholar
4. Okano, K. and Gleason, K.K., Electron. Lett. 31, 74 (1995).Google Scholar
5. Prins, J. F., Diamond and Related Materials 4, 580 (1995).Google Scholar
6. Zvanut, M.E., Carlos, W.E., Freitas, J.R., Jr., Jamison, K. D. and Hellmer, R.P., Appl. Phys. Lett. 65, 2287 (1994).Google Scholar
7. “Numerical Data and Functional Relationships in Science and Technology” in Semiconductors, Vol.22, eds. Madelung, O. and Schulz, M. (Springer Verlag, Berlin 1992).Google Scholar
8. Holder, S.L, Rowan, L.G., and Krebs, J.J., Appl. Phys. Lett. 64, 1091 (1994).Google Scholar
9. Watanabe, and Sugata, K., Jap. J. Appl. Phys. 27, 1808 (1988).Google Scholar
10. Jia, H., Shinar, J., Lang, D.P., and Pruski, M., Phys. Rev.B 48, 17595, (1993).Google Scholar
11. Jamison, K.D., Schmidt, H.K., Eisenmann, D., and Hellmer, R.P., in Proceeding of the 1st Symposium on Semiconductors for room temperature Radiation Detector Applications edited by James, R.B. et. al (Mater. Res. Soc., 302, Pittsburg, Pa 1993) p. 251.Google Scholar
12. Kajihara, S.A., Antonelli, A., Bernholc, J., and Car, R., Phys. Rev. Lett. 66, 2010 (1991).Google Scholar