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Experimental Determination for the Transition Temperature Between Ballistic and Hopping Controlled Recombination in a-Si:H

Published online by Cambridge University Press:  25 February 2011

M. E. Zvanut ,
K. Wang ,
D. Han  and
M. Silver
M. E. Zvanut
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
K. Wang
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
D. Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
M. Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

The transient forward bias current of a-SI:H p-i-n diodes has been measured as a function of temperature and voltage. The transient shows an initial decay followed by a substantial rise which suggests a large value for the ratio of the carrier lifetime to the transit time as demonstrated by Shapiro. We found that both the time at which the rise begins and the ratio of the final saturated current to the minimum current increase with decreasing temperature for temperature greater than a characteristic temperature, Tc. For T < Tc, both the time and the ratio abruptly decrease with temperature. We attribute this change in temperature dependence to a change in the transport kinetics from ballistic to hopping controlled recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 305
Copyright
Copyright © Materials Research Society 1990

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References

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