Symposium H – Silicide Thin Films-Fabrication, Properties and Applications
Research Article
MBE Growth Considerations for the Fabrication of 640×480 IR Focal Plane Arrays of SiGe Hip Detectors
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- 15 February 2011, 431
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Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes
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- 15 February 2011, 437
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GeSi Infrared Detectors Using Selective Deposition
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- 15 February 2011, 443
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Characterization of Ultra-Thin PtSi Films for Infrared Detectors
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- 15 February 2011, 449
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Effect of Phonon Confinement on Intersubband Lasing Lifetimes of Si/SiGe Quantum Well Structures
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- 15 February 2011, 455
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Beem and UHV-TEM Studies of PtSi/Si(001)
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- 15 February 2011, 461
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Electrical and Structural Characterization of Ti Contacts to Si0.89 Ge0.11/Si(001) Epilayers
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- 15 February 2011, 475
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Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates
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- 15 February 2011, 481
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Artcles
Electrical Characteristics of CoSi2 Layers Formed by Mevva Implantation of Co into Si
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- 15 February 2011, 487
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Research Article
New Epitaxially Stabilized Silicide Phases
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- 15 February 2011, 493
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Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers
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- 15 February 2011, 499
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Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy
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- 15 February 2011, 505
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Epitaxial Films of Cobalt Disilicide (100) Evaporated onto Si (100) from a Mixed Source
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- 15 February 2011, 511
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Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy
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- 15 February 2011, 517
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The Growth Of Thin Ti Films on Si(111)-(7×7) Surfaces
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- 15 February 2011, 523
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Initial Stages of Reactions between Monolayer Fe and Si(001) Surfaces
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- 15 February 2011, 529
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Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.
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- 15 February 2011, 535
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Structure and Electrical Properties of Cu/Ge Ohmic Contacts
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- 15 February 2011, 541
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Patterning of Silicide Layers by Local Oxidation
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- 15 February 2011, 549
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Rapid Self-Ion Stimulated Process for TiSi2 thin Film Formation
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- 15 February 2011, 555
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