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Characterization of Ultra-Thin PtSi Films for Infrared Detectors

Published online by Cambridge University Press:  15 February 2011

H. Bender ,
P. Roussel ,
S. Kolodinski ,
A. Torres ,
R. A. Donaton ,
K. Maex  and
P. van der Sluis
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
P. Roussel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
S. Kolodinski
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, bender@imec.be
P. van der Sluis
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
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Abstract

Transmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 449
Copyright
Copyright © Materials Research Society 1996

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References

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