Microscopy and Microanalysis: Volume 22 -

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Microscopy and Microanalysis
ISSN: 1431-9276

EISSN: 1435-8115

URL: /core/journals/microscopy-and-microanalysis
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Microscopy and Microanalysis

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Volume 22 - February 2016

Physical Science Symposia

Microscopy for Thin Films of Metals, Semiconductors and Insulators

Abstract

Characterization of a ferroelectric BaTiO3/SrTiO3heterostructure with interface-induced polarization

Stability Studies of MAPbI3: Identification of Degradation Pathways and Strategies for Observing the Native Structure of Lead Halide Perovskites

Structural Properties of (Sn,Mn)Se2- a New 2D Magnetic Semiconductor with Potential for Spintronic Applications

Crystallization Kinetics of the Phase Change Material GeSb6Te Measured with Dynamic Transmission Electron Microscopy

High Resolution STEM Study of Dy-doped Bi2Te3Thin Films

Impurity Segregation via Extended Defects in Oxide Thin Films Probed by Aberration-Corrected STEM-EELS

Combining STEM Imaging and EELS Mapping to Understand the Growth of La2CoMnO6Double Perovskites on (111) Oriented Perovskite Substrates

Correlative Aberration-Corrected STEM-HAADF and STEM-EELS Analysis of Interface-Induced Polarization in LaCrO3-SrTiO3Superlattices

Atomic and electronic structure study of a Co2FeAl0.5Si0.5half-metal thin film on Si(111)

High-precision stress mapping and defect characterization of thin films of LaMnO3grown on DyScO3substrate.

Nanobeam Diffraction and Geometric Phase Analysis for Strain Measurements in Si/SiGe Nanosheet Structures

Strain at Coalescence of Patterned (Al)GaN Nanorod Arrays Formed by Selective Area Growth for Optoelectronic Devices

Application of STEM EELS Quantification Relative Compositional Ratio Mapping to Characterize SiCOH - Ultra Low-k Dielectric Materials in Si-based Devices

Atomic Scale Analysis of Dopants in CMOS Structures by Atom Probe Tomography

Structure-Properties Relations in III-Nitride Nanostructures for Optoelectronics

Advancement of Heteroepitaxial III-V/Si Thin Films through Defect Characterization

Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy

Imaging Graphene by Field Ion Microscopy

(S)TEM Characterization of Chemically Exfoliated Black Phosphorus

Thin Films of SnSe2Grown by Molecular Beam Epitaxy on GaAs (111)B Substrates

Microscopy and Microanalysis

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Volume 22 - February 2016

Physical Science Symposia

Microscopy for Thin Films of Metals, Semiconductors and Insulators

Abstract