11 results
Processing And Device Performance Of GaN Power Rectifiers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 838-844
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- 2000
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Surface Conversion Effects in Plasma-Damaged p-GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 558-569
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- 2000
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Temperature Dependence and Current Transport Mechanisms in AlxGa1−xN Schottky Rectifiers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T2.7.1
- Print publication:
- 2000
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GaN pnp Bipolar Junction Transistors Operated to 250°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.2.1
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- 2000
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Device Processing for GaN High Power Electronics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.1.1
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- 2000
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 831-837
- Print publication:
- 2000
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p-GaAs Base Regrowth for GaN HBTs and BJTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T6.13.1
- Print publication:
- 2000
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Surface Conversion Effects in Plasma-Damaged p-GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W10.8
- Print publication:
- 1999
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Processing and Device Performance of GaN Power Rectifiers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.67
- Print publication:
- 1999
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Growth and Device Performance of GaN Schottky Rectifiers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e8
- Print publication:
- 1999
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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.66
- Print publication:
- 1999
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