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Growth and Device Performance of GaN Schottky Rectifiers

  • Jen-Inn Chyi (a1), C. -M. Lee (a1), C.C. Chuo (a1), G. C. Chi (a2), G. T. Dang (a3), A. P. Zhang (a3), Fan Ren (a3), X.A. Cao (a4), S.J. Pearton (a4), S. N. G. Chu (a5) and R. G. Wilson (a6)...

Abstract

Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB 2/RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MW-cm−2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.

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