34 results
Factors associated with stigma and manifestations experienced by Indian health care workers involved in COVID-19 management in India: A qualitative study
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- Journal:
- Cambridge Prisms: Global Mental Health / Volume 10 / 2023
- Published online by Cambridge University Press:
- 28 July 2023, e46
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Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors
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- MRS Online Proceedings Library Archive / Volume 1792 / 2015
- Published online by Cambridge University Press:
- 18 May 2015, mrss15-2147627
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- 2015
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Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E5.7
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- 2004
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Identification of Carbon-related Bandgap States in GaN Grown by MOCVD
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y5.38
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- 2003
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Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y9.8
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- 2003
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Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I7.5.1
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- 2001
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 376-383
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- 2000
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Deep levels in n-type Schottky and p+-n homojunction GaN diodes
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 922-928
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- 2000
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Polarity Determination for Mocvd Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 104-110
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- 2000
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Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 433
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- 1999
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Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 715-720
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- 1999
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Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.3
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- 1999
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Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 315
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- 1999
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.9
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- 1999
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown: InGaN Epilayers and InGaN/GaN Quantum Wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 81-86
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- 1999
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Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 351
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- 1999
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Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures
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- MRS Online Proceedings Library Archive / Volume 588 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 19
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- 1999
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Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.80
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- 1999
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Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e2
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- 1999
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Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 1998
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