Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-25T01:52:17.768Z Has data issue: false hasContentIssue false
  • English
  • Français

Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  03 September 2012

L. Zhao ,
H. Marchand ,
P. Fini ,
S. P. Denbaars ,
U. K. Mishra  and
J. S. Speck
L. Zhao
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
H. Marchand
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
P. Fini
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
S. P. Denbaars
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
U. K. Mishra
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Department and Electrical and Computer EngineeringDepartment University of California, Santa Barbara, CA 93106
Get access

Abstract

The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 108cm−2 and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1100> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.3
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Speck, J. S. and Rosner, S. J., Physica B, in press.Google Scholar
[2] Marchand, H., Zhang, N., Zhao, L., Golan, Y., Rosner, S. J., Girolami, G., Fini, P. T., Ibbetson, J. P., Keller, S., DenBaars, S., Speck, J. S., Mishra, U. K., MRS Internet J. Nitride Semicond. Res., 4, Article 2, 1999.Google Scholar
[3] Sasaki, T., Matsuoka, T., J. Appl. Phys. 64, 4531 (1988).Google Scholar
[4] Liliental-Weber, Z., Washburn, J., Pakula, K., and Baranowski, J., Microsc. Microanal., 3, 436 (1997).Google Scholar
[5] Ponce, F.A., Bour, D.P., Young, W.T., Saunders, M., Steeds, J.W., Appl. Phys. Lett. 69, 337 (1996).Google Scholar
[6] Vermaut, P., Ruterana, P., Nouet, G., Phil. Mag. A 76, 1215 (1997).Google Scholar
[7] Weyher, J. L., Müller, S., Grzegory, I., Porowski, S., J. Cryst. Growth 182, 17 (1997).Google Scholar
[8] Hellman, E. S., MRS Internet J. Nitride Semicond. Res. 3, Article 11, 1998.Google Scholar
[9] Available from Virtual Laboratories (Tel. 505 828 1640).Google Scholar
[10] Loretto, M. H. and Smallman, R. E., Defect Analysis in Electron Microscopy, (John Wiley & Sons Inc., New York, 1975), chapter 1.3.Google Scholar