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Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors

  • R. D. Schrimpf (a1), D. M. Fleetwood (a1), S. T. Pantelides (a1), Y.S. Puzyrev (a1), S. Mukherjee (a1), R. A. Reed (a1), J. S. Speck (a2) and U. K. Mishra (a2)...

Abstract

The physical mechanisms responsible for electrically-induced parametric degradation in GaN-based high electron mobility transistors are examined using a combination of experiments, device simulation, and first-principles defect analysis. A relatively simple formulation is developed under the assumption that the hot-electron scattering cross-section is independent of the electron energy. In this case, one can relate the change in defect concentration to the operational characteristics of a device, such as the spatial and energy distribution of electrons (electron temperature), electric field distribution, and electron energy loss to the lattice.

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Keywords

Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors

  • R. D. Schrimpf (a1), D. M. Fleetwood (a1), S. T. Pantelides (a1), Y.S. Puzyrev (a1), S. Mukherjee (a1), R. A. Reed (a1), J. S. Speck (a2) and U. K. Mishra (a2)...

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