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Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures

  • B. D. Little (a1), S. Bidnyk (a1), T. J. Schmidt (a1), J. B. Lam (a1), Y. H. Kwon (a1), J. J. Song (a1), S. Keller (a2), U. K. Mishra (a2), S. P. DenBaars (a2) and W. Yang (a3)...

Abstract

The optical properties of (In, Al) GaN thin films and heterostructures have been compared under the conditions of strong nanosecond excitation. The stimulated emission (SE) threshold from AIGaN epilayers was found to increase with increasing Al content compared to GaN, in contrast to InGaN epilayers, where an order of magnitude decrease is observed. Optically pumped SE has been observed from AIGaN films with aluminum concentrations as high as 26%. Room temperature SE at wavelengths as low as 327 nm has been achieved. In contrast to the increase of SE threshold seen for AlGaN films, we found that AlGaN/GaN heterostructures which utilize carrier confinement and optical waveguiding drastically enhance the lasing characteristics. We demonstrate that AIGaN/GaN heterostructures are suitable for the development of deep ultraviolet laser diodes.

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Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures

  • B. D. Little (a1), S. Bidnyk (a1), T. J. Schmidt (a1), J. B. Lam (a1), Y. H. Kwon (a1), J. J. Song (a1), S. Keller (a2), U. K. Mishra (a2), S. P. DenBaars (a2) and W. Yang (a3)...

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