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Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

  • S. Evoy (a1), C. K. Harnett (a1), S. Keller (a2), U. K. Mishra (a2), S. P. DenBaars (a2) and H. G. Craighead (a1)...

Abstract

We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

  • S. Evoy (a1), C. K. Harnett (a1), S. Keller (a2), U. K. Mishra (a2), S. P. DenBaars (a2) and H. G. Craighead (a1)...

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