Recent progress of SOI growth by electron beam recrystallization is described. Transient temperature profile on the recrystallizing sample surface was analyzed experimentally by direct observation with a thermovision, which is essential for the understanding of crystal growith mechanism. SOI growth was performed by a spot beam annealing and a pseudo-line shaped beam annealing. The line shaped electron beam has been proved to be useful for large area crystallization.
Emphasis was placed on lateral seeded recrystallization of silicon layer evaporated in an ultra high vacuum. Silicon layers with the seed area grown epitaxially during the evaporation and above 1 μm thickness were successfully recrystallized, resulting in reproducible lateral epitaxiy. The pseudo-line shaped electron beam formed by very high frequency oscillation enabled dimensional enlargement of lateral epitaxial growth. crystalline properties were characterized by analyses of Rutherford backscattering and electron channeling pattern.