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Electron-Beam Recrystallization of Silicon Layers on Silicon Dioxide

Published online by Cambridge University Press:  22 February 2011

Tomoyasu Inoue ,
Kenji Shibata ,
Koichi Kato ,
Toshio Yoshii ,
Iwao Higashinakagawa ,
Kenji Taniguchi  and
Masahiro Kashiwagi
Tomoyasu Inoue
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Kenji Shibata
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Koichi Kato
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Toshio Yoshii
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Iwao Higashinakagawa
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Kenji Taniguchi
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
Masahiro Kashiwagi
Affiliation:
Toshiba Research and Development Center, Toshiba Corp. 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Abstract

Recent progress of SOI growth by electron beam recrystallization is described. Transient temperature profile on the recrystallizing sample surface was analyzed experimentally by direct observation with a thermovision, which is essential for the understanding of crystal growith mechanism. SOI growth was performed by a spot beam annealing and a pseudo-line shaped beam annealing. The line shaped electron beam has been proved to be useful for large area crystallization.

Emphasis was placed on lateral seeded recrystallization of silicon layer evaporated in an ultra high vacuum. Silicon layers with the seed area grown epitaxially during the evaporation and above 1 μm thickness were successfully recrystallized, resulting in reproducible lateral epitaxiy. The pseudo-line shaped electron beam formed by very high frequency oscillation enabled dimensional enlargement of lateral epitaxial growth. crystalline properties were characterized by analyses of Rutherford backscattering and electron channeling pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 523
Copyright
Copyright © Materials Research Society 1984

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References

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