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Strained Linbo3/Sapphire Heterostructures Grown by Pulsed Laser Deposition

  • Yoshihiko Shibata (a1), Naohiro Kuze (a1), Masahiro Matsui (a1), Masaki Kanai (a2) and Tomoji Kawai (a2)...

Abstract

Thin LiNbO3 films are deposited on (001) sapphire substrates by Ar F pulsed laser ablation. The films are evaluated by X-ray diffraction analysis at various temperatures, as well as high-resolution transmission electron microscopy (TEM). The deposited films are highly epitaxial but that are strained, that is, the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals. X-ray diffraction analysis at deposition temperature, as well as TEM show that the strain is caused by the difference in thermal expansion coefficients between LiNbO3 and sapphire substrates.

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