The segregation of reactive elements (REs) along thermally grown oxide (TGO) grain boundaries has been associated to slower oxide growth kinetics and improved creep properties. However, the incorporation and diffusion of these elements into the TGO during oxidation of Ni alloys remains an open question. In this work, electron backscatter diffraction in transmission mode (t-EBSD) was used to investigate the microstructure of TGO within the thermal barrier coating on a Ni-based superalloy, and atom probe tomography (APT) was used to quantify the segregation behavior of REs to α-Al2O3 grain boundaries. Integrating the two techniques enables a higher level of site-specific analysis compared to the routine focused ion beam lift-out sample preparation method without t-EBSD. Needle-shaped APT specimens readily meet the thickness criterion for electron diffraction analysis. Transmission EBSD provides an immediate feedback on grain orientation and grain boundary location within the APT specimens to help target grain boundaries in the TGO. Segregation behavior of REs is discussed in terms of the grain boundary character and relative location in TGO.

There are advantages to performing transmission electron backscattering diffraction (tEBSD) in conjunction with focused ion beam-based specimen preparation for atom probe tomography (APT). Although tEBSD allows users to identify the position and character of grain boundaries, which can then be combined with APT to provide full chemical and orientation characterization of grain boundaries, tEBSD can also provide imaging information that improves the APT specimen preparation process by insuring proper placement of the targeted grain boundary within an APT specimen. In this report we discuss sample tilt angles, ion beam milling energies, and other considerations to optimize Kikuchi diffraction pattern quality for the APT specimen geometry. Coordinated specimen preparation and analysis of a grain boundary in a Ni-based Inconel 600 alloy is used to illustrate the approach revealing a 50° misorientation and trace element segregation to the grain boundary.

We demonstrate in this article an exciting new method for obtaining electron Kikuchi diffraction patterns in transmission from thin specimens in a scanning electron microscope (SEM) fitted with a conventional electron backscattered diffraction (EBSD) detector. We have labeled the method transmission EBSD (t-EBSD) because it uses off-the-shelf commercial EBSD equipment to capture the diffraction patterns and also to differentiate it from transmission Kikuchi diffraction available in the transmission electron microscope (TEM). Lateral spatial resolution of less than 10 nm has been demonstrated for particles and better than 5 nm for orientation mapping of thin films. The only new requirement is a specimen holder that allows the transmitted electrons diffracted from an electron transparent sample to intersect the EBSD detector. We briefly outline our development of the technique, followed by descriptions of sample preparation techniques and operating conditions. We then present examples of t-EBSD patterns from a variety of specimens, including particles of diameter <10 nm, wires of diameter <80 nm, and films with thicknesses from ~5 nm to 300 nm. Finally, we discuss the phenomenon in the context of Monte Carlo electron scattering simulations.