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Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).
We have investigated BisGMA-TEGDMA dental composites with varying mass fractions of hydroxyapatite and silica filler. Commercially available dental composites with 60% silica filler were synthesized in the presence of nanometer-sized hydroxyapatite crystals. We have compared the mechanical properties of BisGMA-TEGDMA samples filled with silica only and those filled with silica and hydroxyapatite particles. We report on hardness as a function of crystalline content as determined by nanoindentation and microindentation.