35 results
Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1587 / 2014
- Published online by Cambridge University Press:
- 16 December 2013, jsapmrs13-1587-7087
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- 2014
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Process-dependent Coercive Fields in Undoped and Mn-doped BiFeO3 Films Formed on SrRuO3/Pt(111) Electrodes by rf Sputtering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1199 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1199-F06-33
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- 2009
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Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness
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- Journal:
- Journal of Materials Research / Volume 23 / Issue 10 / October 2008
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2727-2732
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- October 2008
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Recent Progress in Ferroelectric Random Access Memory Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I08-05
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- 2007
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Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ
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- Journal:
- MRS Online Proceedings Library Archive / Volume 933 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0933-G03-03
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- 2006
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Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 902 / 2005
- Published online by Cambridge University Press:
- 26 February 2011, 0902-T03-52
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- 2005
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Current Status of Ferroelectric Random-Access Memory
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- Journal:
- MRS Bulletin / Volume 29 / Issue 11 / November 2004
- Published online by Cambridge University Press:
- 31 January 2011, pp. 823-828
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- November 2004
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Long Time Data Retention and A Mechanism in Ferroelectric-Gate Field Effect Transistors with HfO2 Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 830 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, D2.9
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- 2004
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Ferroelectric Thin Film Depositions for Various Types of FeRAMs (Ferroelectric Random Access Memories)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 830 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, D2.1
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- 2004
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Fabrication of Ru/Bi4−xLaxTi3O12/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C7.7
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- 2003
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Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al2O3/Si3N4/Si Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C9.6/E9.6
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- 2003
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Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al2O3/Si3N4/Si Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E9.6/C9.6
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- 2003
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‥Recent Progress in Ferroelectic-gate FETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 747 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, T4.5/U9.5
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- 2002
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•• Recent Progress in Ferroelectic-gate FETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 748 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, U9.5/T4.5
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- 2002
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Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 748 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, U12.8
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- 2002
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New Line of Solid Solution System of Oxide Ferroelectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 748 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, U2.1
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- 2002
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Al2O3/Si3N4 Buffer Layer for High Performance MFIS (Metal-Ferroelectric-Insulator-Semiconductor) Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 688 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, C11.4.1
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- 2001
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Preparation and Characterization of (Bi,La)4Ti3O12 Films by the Sol-Gel Technique
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- Journal:
- MRS Online Proceedings Library Archive / Volume 655 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, CC13.9.1
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- 2000
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New Pt/(Bi,La)4Ti3O12/Si3N4/Si MFIS Structure for FET-Type Ferroelectric Memories by the Sol-Gel Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 655 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, CC3.6.1
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- 2000
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Current Status of Fabrication and Integration of Ferroelectric-Gate Fet's
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- Journal:
- MRS Online Proceedings Library Archive / Volume 596 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 427
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- 1999
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