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Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

Published online by Cambridge University Press:  31 January 2011

Xubing Lu ,
Hiroshi Ishiwara  and
Kenji Maruyama
Xubing Lu*
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-Ku, Yokohama 226-8502, Japan
Hiroshi Ishiwara
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-Ku, Yokohama 226-8502, Japan
Kenji Maruyama
Affiliation:
Fujitsu Laboratories Ltd., Morinosato-Wakamiya, Atsugi 243-0197, Japan
*
a)Address all correspondence to this author. e-mail: lu.x.ac@m.titech.ac.jp
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Abstract

Metal-ferroelectric-insulator-Si (MFIS) structures using HfSiON as buffer layers were fabricated, and the impact of buffer layer thickness on the electrical properties of the MFIS devices was investigated. HfSiON films with thickness ranging from 1 to 4 nm were deposited by electron beam evaporation, which exhibited much reduced leakage current when compared to that of SiO2 with the same equivalent oxide thickness. From the viewpoint of polarization and charge injection, the flatband voltage and memory window width dependent on the sweeping voltages were discussed for the MFIS diodes with 1-, 2-, and 4-nm-thick HfSiON buffer layers. Small leakage current as well as excellent long-term data retention characteristics were found for all of these samples. It was also found that MFIS diodes with 2-nm-thick HfSiON buffer layer have the largest memory window width. Ferroelectric-gate transistors fabricated with a Pt/SBT(300nm)/HfSiON (2 nm)/Si gate structure showed a memory window of 0.8 V and a high drain current on/off ratio of 108 for the gate voltage sweep between +4 and −4 V. All of these excellent electrical properties proved that HfSiON acts as an excellent barrier for suppressing both leakage current and atomic interdiffusion.

Keywords

Dielectric propertiesElectronic materialFerroelectric
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 10 , October 2008 , pp. 2727 - 2732
Copyright
Copyright © Materials Research Society 2008

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References

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