A Ru/ Bi 4-xLaxTi 3O12/Ru (Ru/BLT/Ru) capacitor structure with Ru top electrodes deposited by metalorganic chemical vapor deposition (MOCVD) was fabricated. On a Ru film deposited by MOCVD, BLT film was formed by a sol-gel method and crystallized in vacuum. Depositing a conformal Ru film on a BLT/Ru structure by MOCVD, Ru/BLT/Ru stack with smooth and flat surface was successfully formed. Then, ferroelectric Ru/BLT/Ru capacitors were fabricated through a dry etching process. It exhibited both good ferroelectric properties (2P r =16 μC/cm2) and low leakage current density (J =10−7 A/cm2), suggesting that Ru film deposited by MOCVD showed sufficient properties for the tope electrode of Ru/BLT/Ru structures.