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Fabrication of Ru/Bi4−xLaxTi3O12/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition

  • Taisuke Furukawa (a1), Takeharu Kuroiwa (a1), Yoshihisa Fujisaki (a1) (a2), Takehiko Sato (a1) and Hiroshi Ishiwara (a2)...

Abstract

A Ru/ Bi 4-xLaxTi 3O12/Ru (Ru/BLT/Ru) capacitor structure with Ru top electrodes deposited by metalorganic chemical vapor deposition (MOCVD) was fabricated. On a Ru film deposited by MOCVD, BLT film was formed by a sol-gel method and crystallized in vacuum. Depositing a conformal Ru film on a BLT/Ru structure by MOCVD, Ru/BLT/Ru stack with smooth and flat surface was successfully formed. Then, ferroelectric Ru/BLT/Ru capacitors were fabricated through a dry etching process. It exhibited both good ferroelectric properties (2P r =16 μC/cm2) and low leakage current density (J =10−7 A/cm2), suggesting that Ru film deposited by MOCVD showed sufficient properties for the tope electrode of Ru/BLT/Ru structures.

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1. Furukawa, T., Kuroiwa, T., Fujisaki, Y., Sato, T., and Ishiwara, H., Integrated Ferroelectrics 59 1437 (2003).
2. Furukawa, T., Kuroiwa, T., Fujisaki, Y., Sato, T., and Ishiwara, H., Integrated Ferroelectrics to be published (2003).
3. Sato, T., Kuroiwa, T., and Ishiwara, H., Extended Abstract of 1st International Meeting on Ferroelectric Random Access Memories 168 (2001).

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Fabrication of Ru/Bi4−xLaxTi3O12/Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition

  • Taisuke Furukawa (a1), Takeharu Kuroiwa (a1), Yoshihisa Fujisaki (a1) (a2), Takehiko Sato (a1) and Hiroshi Ishiwara (a2)...

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