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New Pt/(Bi,La)4Ti3O12/Si3N4/Si MFIS Structure for FET-Type Ferroelectric Memories by the Sol-Gel Method
Published online by Cambridge University Press: 21 March 2011
Abstract
The well c-axis-oriented Bi3.25La0.75Ti3O12 films with good crystallinity and good surface morphology were obtained at temperatures higher than 600°C It was also found in a Pt / 100nm-Bi3.25La0.75Ti3O12 / 3nm-Si3N4 / Si ( metal / ferroelectric / insulator / semiconductor ) structure that C-V characteristics showed a hysteresis loop with a memory window of about 1V and both the high and low capacitance values kept at zero bias voltage did not change for more than 3 hours.
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- Copyright © Materials Research Society 2001
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