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New Pt/(Bi,La)4Ti3O12/Si3N4/Si MFIS Structure for FET-Type Ferroelectric Memories by the Sol-Gel Method

Published online by Cambridge University Press:  21 March 2011

Takeshi Kijima ,
Yoshihisa Fujisaki  and
Hiroshi Ishiwara
Takeshi Kijima
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Yoshihisa Fujisaki
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

The well c-axis-oriented Bi3.25La0.75Ti3O12 films with good crystallinity and good surface morphology were obtained at temperatures higher than 600°C It was also found in a Pt / 100nm-Bi3.25La0.75Ti3O12 / 3nm-Si3N4 / Si ( metal / ferroelectric / insulator / semiconductor ) structure that C-V characteristics showed a hysteresis loop with a memory window of about 1V and both the high and low capacitance values kept at zero bias voltage did not change for more than 3 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.6.1
Copyright
Copyright © Materials Research Society 2001

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