We investigated the electrical properties and transmission line performance of indium antimonide nanowires. The results indicate that the of nanowires suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the contact resistances, scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. nanowires show extremely inductive behavior during the AC measurements and due to these parasitic parameters, they can sustain transmission for the signals having frequencies up to 10 MHz. The bandwidth of the nanowires is directly proportional to the diameter of the nanowires. Improving the mobility to higher values and introducing de-embedding and impedance matching to the measurements and analysis could easily carry the bandwidth beyond GHz levels.