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Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires

Published online by Cambridge University Press:  30 June 2011

Ali Bilge Guvenc ,
Miroslav Penchev ,
Jiebin Zhong ,
Cengiz Ozkan  and
Mihrimah Ozkan
Ali Bilge Guvenc
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Miroslav Penchev
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Jiebin Zhong
Affiliation:
Department of Mechanical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
Cengiz Ozkan
Affiliation:
Department of Mechanical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A. Material Science and Engineering Program, University of California-Riverside, Riverside, CA 92521, U.S.A.
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A.
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Abstract

We investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters of 20 nm and below. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. The 20 nm NWs can sustain data rates up to 5 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system with a bit error rate (BER) level of 10-8. The data rate is directly proportional to the diameter of the NWs.

Keywords

III-Vnanostructureelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee06-12
Copyright
Copyright © Materials Research Society 2011

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