4 results
3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1108 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1108-A11-04
- Print publication:
- 2008
-
- Article
- Export citation
The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 796 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, V2.8
- Print publication:
- 2003
-
- Article
- Export citation
Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 15
- Print publication:
- 1993
-
- Article
- Export citation
The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si0.7Ge0.3
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 323
- Print publication:
- 1993
-
- Article
- Export citation