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The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

Published online by Cambridge University Press:  01 February 2011

Prabhakar Bandaru ,
Subal Sahni ,
Eli Yablonovitch ,
Hyung-Jun Kim  and
Ya-Hong Xie
Prabhakar Bandaru
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Subal Sahni
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Eli Yablonovitch
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Hyung-Jun Kim
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095
Ya-Hong Xie
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095
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Abstract

We report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.8
Copyright
Copyright © Materials Research Society 2004

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References

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